Effects of GaAs/AlAs superlattice buffer layers on selective area regrowth for GaAs/AlGaAs self-aligned structure lasers

Journal Article · Sun Dec 01 00:00:00 EST 1985 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.96329· OSTI ID:6211837

Noda, S; Fujiwara, K; Nakayama, T

The effects of GaAs/AlAs superlattice buffer layers on selective area regrowth by molecular beam epitaxy were investigated for self-aligned structure lasers. It is demonstrated that the superlattice buffer layer is an effective means to obtain a smoother interface with reduced alloy clustering, from which the threshold current was reduced and stable single transverse mode operation was obtained.

• Research Organization: Central Research Laboratory, Mitsubishi Electric Corporation, 8-1-1 Tsukaguchi-honmachi, Amagasaki, Hyogo 661, Japan
• OSTI ID: 6211837
• Journal Information: Appl. Phys. Lett.; (United States), Vol. 47:11
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
ALUMINIUM ARSENIDES
MOLECULAR BEAM EPITAXY
GALLIUM ARSENIDES
SEMICONDUCTOR LASERS
FABRICATION
OPERATION
EXPERIMENTAL DATA
LAYERS
OSCILLATION MODES
THRESHOLD CURRENT
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CURRENTS
DATA
ELECTRIC CURRENTS
EPITAXY
GALLIUM COMPOUNDS
INFORMATION
LASERS
NUMERICAL DATA
PNICTIDES
SEMICONDUCTOR DEVICES
420300* - Engineering- Lasers- (-1989)