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Title: Photoluminescence and electroluminescence in graded cadmium sulfoselenide electrodes: applications to photoelectrochemical cells

Abstract

Inhomogeneous samples of n-type CdS/sub x/Se/sub 1-x/ (0 less than or equal to x < 1) were prepared by vapor-phase diffusion of S into a single-crystal CdSe substrate. Characterization of the samples by Auger electron spectroscopy (AES)/Ar ion sputter etching reveals that S has substituted for Se in the lattice to produce a graded region: The depth profile analysis indicates that from a composition with x nearly unity at the surface, x monotonically declines to zero over a distance of approx. 1 ..mu..m. Correspondingly, the band gap energy diminishes from approx. 2.4 eV for the CdS-like composition to approx. 1.7 eV for CdSe. Photoluminescence (PL) and electroleuminescence (EL) from the graded material appear to derive from the luminescence of the CdS/sub x/Se/sub 1-x/ compositions which make up the graded region: Emission from approx. 500 to 750 nm matches the spectral region spanned by PL and EL from homogeneous, single-crystal CdS/sub x/Se/sub 1-x/ samples which emit near their band gap energies. A previously established linear correlation between emission maxima (nm) and composition in homogeneous CdS/sub x/Se/sub 1-x/ samples provides a spatial probe of electron-hole (e/sup -/-h/sup +/) pair recombination in the inhomogeneous material: Regions from which PL and EL originate canmore » be inferred from their spectral distribution in combination with the AES/depth profile data. The inhomogeneous samples can be used as photoanodes of photoelectrochemical cells employing aqueous (poly)sulfide electrolyte. Photoaction spectra exhibit their principal onset at approx. 560 nm, indicating that the S-rich, near-surface region is primarily responsible for photocurrent. Comparisons of these PL and EL properties with those of related graded materials and with homogeneous CdS/sub x/Se/sub 1-x/ samples are discussed. 5 figures.« less

Authors:
; ;
Publication Date:
Research Org.:
Univ. of Wisconsin, Madison
OSTI Identifier:
6198593
Resource Type:
Journal Article
Journal Name:
J. Solid State Chem.; (United States)
Additional Journal Information:
Journal Volume: 45:1
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY; 14 SOLAR ENERGY; CADMIUM SELENIDES; ELECTROLUMINESCENCE; PHOTOLUMINESCENCE; CADMIUM SULFIDES; AUGER ELECTRON SPECTROSCOPY; CADMIUM; CADMIUM SELENIDE SOLAR CELLS; ELECTRODES; PHOTOELECTROCHEMICAL CELLS; CADMIUM COMPOUNDS; CHALCOGENIDES; DIRECT ENERGY CONVERTERS; ELECTROCHEMICAL CELLS; ELECTRON SPECTROSCOPY; ELEMENTS; EQUIPMENT; INORGANIC PHOSPHORS; LUMINESCENCE; METALS; PHOSPHORS; PHOTOELECTRIC CELLS; PHOTOVOLTAIC CELLS; SELENIDES; SELENIUM COMPOUNDS; SOLAR CELLS; SOLAR EQUIPMENT; SPECTROSCOPY; SULFIDES; SULFUR COMPOUNDS; 400400* - Electrochemistry; 400500 - Photochemistry; 140501 - Solar Energy Conversion- Photovoltaic Conversion

Citation Formats

Carpenter, M K, Streckert, H H, and Ellis, A B. Photoluminescence and electroluminescence in graded cadmium sulfoselenide electrodes: applications to photoelectrochemical cells. United States: N. p., 1982. Web. doi:10.1016/0022-4596(82)90290-0.
Carpenter, M K, Streckert, H H, & Ellis, A B. Photoluminescence and electroluminescence in graded cadmium sulfoselenide electrodes: applications to photoelectrochemical cells. United States. https://doi.org/10.1016/0022-4596(82)90290-0
Carpenter, M K, Streckert, H H, and Ellis, A B. Mon . "Photoluminescence and electroluminescence in graded cadmium sulfoselenide electrodes: applications to photoelectrochemical cells". United States. https://doi.org/10.1016/0022-4596(82)90290-0.
@article{osti_6198593,
title = {Photoluminescence and electroluminescence in graded cadmium sulfoselenide electrodes: applications to photoelectrochemical cells},
author = {Carpenter, M K and Streckert, H H and Ellis, A B},
abstractNote = {Inhomogeneous samples of n-type CdS/sub x/Se/sub 1-x/ (0 less than or equal to x < 1) were prepared by vapor-phase diffusion of S into a single-crystal CdSe substrate. Characterization of the samples by Auger electron spectroscopy (AES)/Ar ion sputter etching reveals that S has substituted for Se in the lattice to produce a graded region: The depth profile analysis indicates that from a composition with x nearly unity at the surface, x monotonically declines to zero over a distance of approx. 1 ..mu..m. Correspondingly, the band gap energy diminishes from approx. 2.4 eV for the CdS-like composition to approx. 1.7 eV for CdSe. Photoluminescence (PL) and electroleuminescence (EL) from the graded material appear to derive from the luminescence of the CdS/sub x/Se/sub 1-x/ compositions which make up the graded region: Emission from approx. 500 to 750 nm matches the spectral region spanned by PL and EL from homogeneous, single-crystal CdS/sub x/Se/sub 1-x/ samples which emit near their band gap energies. A previously established linear correlation between emission maxima (nm) and composition in homogeneous CdS/sub x/Se/sub 1-x/ samples provides a spatial probe of electron-hole (e/sup -/-h/sup +/) pair recombination in the inhomogeneous material: Regions from which PL and EL originate can be inferred from their spectral distribution in combination with the AES/depth profile data. The inhomogeneous samples can be used as photoanodes of photoelectrochemical cells employing aqueous (poly)sulfide electrolyte. Photoaction spectra exhibit their principal onset at approx. 560 nm, indicating that the S-rich, near-surface region is primarily responsible for photocurrent. Comparisons of these PL and EL properties with those of related graded materials and with homogeneous CdS/sub x/Se/sub 1-x/ samples are discussed. 5 figures.},
doi = {10.1016/0022-4596(82)90290-0},
url = {https://www.osti.gov/biblio/6198593}, journal = {J. Solid State Chem.; (United States)},
number = ,
volume = 45:1,
place = {United States},
year = {1982},
month = {11}
}