EBIC (electron beam induced current) contrast of clean, decorated and deuterium passivated Si(Ge) epitaxial misfit dislocations
Abstract
The electrical activity of as-grown and intentionally decorated misfit dislocations in an epitaxial Si/Si(Ge) heterostructure was examined using the electron beam induced current (EBIC) technique in a scanning electron microscope. Misfit dislocations, which were not visible initially, were subsequently activated either by an unknown processing contaminant or a backside metallic impurity. Passivation of these contaminated dislocations was then studied using low energy deuterium ion implantation in a Kaufman ion source. EBIC results show that the recombination activity of the decorated misfit dislocations was dramatically reduced by the deuterium treatment. Although a front side passivation treatment was more effective than a backside treatment, a surface ion bombardment damage problem is still evident. 5 refs., 3 figs.
- Authors:
-
- North Carolina State Univ., Raleigh, NC (USA). Dept. of Materials Science and Engineering
- Sandia National Labs., Albuquerque, NM (USA)
- Publication Date:
- Research Org.:
- Sandia National Labs., Albuquerque, NM (USA)
- Sponsoring Org.:
- USDOE; USDOE, Washington, DC (USA)
- OSTI Identifier:
- 6198202
- Report Number(s):
- SAND-91-0011C; CONF-910552-8
ON: DE91006967
- DOE Contract Number:
- AC04-76DP00789
- Resource Type:
- Conference
- Resource Relation:
- Conference: 179. meeting of the Electrochemical Society, Washington, DC (USA), 5-10 May 1991
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; GERMANIUM ALLOYS; DISLOCATIONS; SILICON; SILICON ALLOYS; CRYSTAL DEFECTS; DEUTERIUM; ELECTRICAL PROPERTIES; ION IMPLANTATION; PASSIVATION; SCANNING ELECTRON MICROSCOPY; ALLOYS; CRYSTAL STRUCTURE; ELECTRON MICROSCOPY; ELEMENTS; HYDROGEN ISOTOPES; ISOTOPES; LIGHT NUCLEI; LINE DEFECTS; MICROSCOPY; NUCLEI; ODD-ODD NUCLEI; PHYSICAL PROPERTIES; SEMIMETALS; STABLE ISOTOPES; 360102* - Metals & Alloys- Structure & Phase Studies
Citation Formats
Zhou, T Q, Buczkowski, A, Radzimski, Z J, Rozgonyi, G A, Seager, C H, and Panitz, J. EBIC (electron beam induced current) contrast of clean, decorated and deuterium passivated Si(Ge) epitaxial misfit dislocations. United States: N. p., 1991.
Web.
Zhou, T Q, Buczkowski, A, Radzimski, Z J, Rozgonyi, G A, Seager, C H, & Panitz, J. EBIC (electron beam induced current) contrast of clean, decorated and deuterium passivated Si(Ge) epitaxial misfit dislocations. United States.
Zhou, T Q, Buczkowski, A, Radzimski, Z J, Rozgonyi, G A, Seager, C H, and Panitz, J. 1991.
"EBIC (electron beam induced current) contrast of clean, decorated and deuterium passivated Si(Ge) epitaxial misfit dislocations". United States. https://www.osti.gov/servlets/purl/6198202.
@article{osti_6198202,
title = {EBIC (electron beam induced current) contrast of clean, decorated and deuterium passivated Si(Ge) epitaxial misfit dislocations},
author = {Zhou, T Q and Buczkowski, A and Radzimski, Z J and Rozgonyi, G A and Seager, C H and Panitz, J},
abstractNote = {The electrical activity of as-grown and intentionally decorated misfit dislocations in an epitaxial Si/Si(Ge) heterostructure was examined using the electron beam induced current (EBIC) technique in a scanning electron microscope. Misfit dislocations, which were not visible initially, were subsequently activated either by an unknown processing contaminant or a backside metallic impurity. Passivation of these contaminated dislocations was then studied using low energy deuterium ion implantation in a Kaufman ion source. EBIC results show that the recombination activity of the decorated misfit dislocations was dramatically reduced by the deuterium treatment. Although a front side passivation treatment was more effective than a backside treatment, a surface ion bombardment damage problem is still evident. 5 refs., 3 figs.},
doi = {},
url = {https://www.osti.gov/biblio/6198202},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jan 01 00:00:00 EST 1991},
month = {Tue Jan 01 00:00:00 EST 1991}
}