U.S. Department of EnergyOffice of Scientific and Technical Information
Fabrication and testing of optics for EUV projection lithography
Abstract
Extreme Ultraviolet Lithography (EUVL) is a leading candidate as a stepper technology for fabricating the next generation of microelectronic circuits. EUVL is an optical printing technique qualitatively similar to Deep UV Lithography (DUVL), except that 11-13nm wavelength light is used instead of 193-248nm. The feasibility of creating 0.1µm features has been well-established using small- field EUVL printing tools, and development efforts are currently underway to demonstrate that cost- effective production equipment can be engineered to perform full-width ring-field imaging consistent with high wafer throughput rates. Ensuring that an industrial supplier base will be available for key components and subsystems is crucial to the success of EUVL. In particular, the projection optics are the heart of the EUVL imaging system, yet they have figure and finish specifications that are beyond the state-of-the-art in optics manufacturing. Thus it is important to demonstrate that industry will be able to fabricate and certify these optics commensurate with EUVL requirements. The goal of this paper is to demonstrate that procuring EUVL projection optical substrates is feasible.
- Authors:
- Publication Date:
- Research Org.:
- Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
- Sponsoring Org.:
- USDOE Office of Defense Programs (DP)
- OSTI Identifier:
- 6198
- Report Number(s):
- UCRL-JC-128290-REV-2
WFO; ON: DE00006198
- DOE Contract Number:
- W-7405-Eng-48
- Resource Type:
- Conference
- Resource Relation:
- Conference: American Society for Precision Engineering 13th Annual Meeting, St. Loius, MO, October 25-30, 1998
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES; Extreme Ultraviolet Radiation; Microelectronic Circuits; Optics; Optical Systems; Fabrication; Testing
Citation Formats
Hudyma, R M, Sommargren, G E, Sweeney, D W, and Taylor, J S. Fabrication and testing of optics for EUV projection lithography. United States: N. p., 1998.
Web.
Hudyma, R M, Sommargren, G E, Sweeney, D W, & Taylor, J S. Fabrication and testing of optics for EUV projection lithography. United States.
Hudyma, R M, Sommargren, G E, Sweeney, D W, and Taylor, J S. 1998.
"Fabrication and testing of optics for EUV projection lithography". United States. https://www.osti.gov/servlets/purl/6198.
@article{osti_6198,
title = {Fabrication and testing of optics for EUV projection lithography},
author = {Hudyma, R M and Sommargren, G E and Sweeney, D W and Taylor, J S},
abstractNote = {Extreme Ultraviolet Lithography (EUVL) is a leading candidate as a stepper technology for fabricating the next generation of microelectronic circuits. EUVL is an optical printing technique qualitatively similar to Deep UV Lithography (DUVL), except that 11-13nm wavelength light is used instead of 193-248nm. The feasibility of creating 0.1µm features has been well-established using small- field EUVL printing tools, and development efforts are currently underway to demonstrate that cost- effective production equipment can be engineered to perform full-width ring-field imaging consistent with high wafer throughput rates. Ensuring that an industrial supplier base will be available for key components and subsystems is crucial to the success of EUVL. In particular, the projection optics are the heart of the EUVL imaging system, yet they have figure and finish specifications that are beyond the state-of-the-art in optics manufacturing. Thus it is important to demonstrate that industry will be able to fabricate and certify these optics commensurate with EUVL requirements. The goal of this paper is to demonstrate that procuring EUVL projection optical substrates is feasible.},
doi = {},
url = {https://www.osti.gov/biblio/6198},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Wed Sep 16 00:00:00 EDT 1998},
month = {Wed Sep 16 00:00:00 EDT 1998}
}