Lattice location of As and Sb implanted in silicon after annealing with a pulsed ruby laser
The lattice location of implanted arsenic and antimony in single crystal silicon ((100) orientation) after pulsed laser annealing has been studied using positive ion channeling-backscattering. The samples have been implanted with 100 keV /sup 75/As or /sup 121/Sb to doses in the range 1 x 10/sup 15/ to 3 x 10/sup 16//cm/sup 2/. The samples were subsequently annealed using the Q-switched output of a pulsed ruby laser (1.5--1.7 J/cm/sup 2/, approx.50 x 10/sup -9/ sec pulse duration). Channeling measurements (2.5 MeV He/sup +/ ions) along major axial directions ((100), (110) and (111) and detailed scans across the axes were used to determine the lattice location of the implanted dopants after annealing. It was determined that, in the dose range investigated, 98--99% of the As occupy substitutional sites. Antimony doses less than 1.5 x 10/sup 16//cm/sup 2/ yield similar results. Electrical measurements of the number of electrically active dopants support the high substitutional fractions observed by the ion channeling-backscattering measurements. Also reported are channeling results for /sup 75/As implanted (approx.1 x 10/sup 16//As/cm/sup 2/) samples that have been annealed using the Spire Corporation SPI-PULSE 5000 electron beam generator. Substitutional fraction (97--99%) comparable to laser annealing were obtained, but some nonuniformities across the samples were observed that were not present in the laser annealed samples.
- Research Organization:
- Solid State Division, Oak Ridge National Laboratory, Oak ridge, Tennessee 37830
- OSTI ID:
- 6196354
- Report Number(s):
- CONF-781121-; TRN: 79-015848
- Journal Information:
- AIP (Am. Inst. Phys.) Conf. Proc.; (United States), Vol. 50:1; Conference: Annual meeting of Materials Research Society, Boston, MA, USA, 28 Nov 1978
- Country of Publication:
- United States
- Language:
- English
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