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Title: Epitaxial yttria-stabilized zirconia on (1 1 02)sapphire for YBa sub 2 Cu sub 3 O sub 7 minus. delta. thin films

Journal Article · · Applied Physics Letters; (USA)
DOI:https://doi.org/10.1063/1.104669· OSTI ID:6195227
; ;  [1]; ;  [2]; ; ; ;  [3]
  1. ERDC, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (US)
  2. Neocera Inc., 100 Jersey Avenue, Box D-12, New Brunswick, New Jersey 08901 (US)
  3. Bellcore, Red Bank, New Jersey 07701 (US)

Epitaxial yttria-stabilized zirconia (YSZ) films were deposited on (1{bar 1}02) sapphire by pulsed laser deposition. The films are formed in a cubic phase with the {ital a} axis normal to the substrate surface. Ion beam (2.8 MeV He{sup ++}) channeling measurements show that the YSZ films are highly crystalline with a channeling minimum yield of 8%. The epitaxial relationship between the film and substrate is further confirmed by a cross-section transmission electron microscopy study. Epitaxial YBa{sub 2}Cu{sub 3}O{sub 7{minus}{delta}} thin films deposited on YSZ/sapphire have {ital T}{sub {ital c}} and {ital J}{sub {ital c}} of up to 89 K and 1{times}10{sup 6} A/cm{sup 2} at 77 K, respectively.

OSTI ID:
6195227
Journal Information:
Applied Physics Letters; (USA), Vol. 58:3; ISSN 0003-6951
Country of Publication:
United States
Language:
English