Room-temperature laser operation of AlGaAs/GaAs double heterostructures fabricated on Si substrates by metalorganic chemical vapor deposition
Abstract
AlGaAs/GaAs double heterostructure laser diodes have been fabricated on Si substrates using GaP/(GaP/GaAsP) superlattice/(GaAsP/GaAs) superlattice intermediate layers grown by metalorganic chemical vapor deposition. A threshold current density at 16.5 C and a characteristic temperature T0 of 4.9 kA/cmS and 179 K respectively have been obtained for the diode on Si substrate.
- Authors:
- Publication Date:
- Research Org.:
- Department of Electronic and Computer Engineering, Nagoya Institute of Technology, Gokiso-Cho, Showa-ku, Nagoya 466, Japan
- OSTI Identifier:
- 6192956
- Resource Type:
- Journal Article
- Journal Name:
- Appl. Phys. Lett.; (United States)
- Additional Journal Information:
- Journal Volume: 48:6
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING; GALLIUM ARSENIDES; CHEMICAL VAPOR DEPOSITION; GALLIUM PHOSPHIDES; SEMICONDUCTOR LASERS; FABRICATION; OPERATION; SILICON; VAPOR DEPOSITED COATINGS; SUPERLATTICES; CURRENT DENSITY; EXPERIMENTAL DATA; HETEROJUNCTIONS; TEMPERATURE EFFECTS; THRESHOLD CURRENT; ARSENIC COMPOUNDS; ARSENIDES; CHEMICAL COATING; COATINGS; CURRENTS; DATA; DEPOSITION; ELECTRIC CURRENTS; ELEMENTS; GALLIUM COMPOUNDS; INFORMATION; JUNCTIONS; LASERS; NUMERICAL DATA; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PNICTIDES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR JUNCTIONS; SEMIMETALS; SURFACE COATING; 420300* - Engineering- Lasers- (-1989)
Citation Formats
Sakai, S, Soga, T, Takeyasu, M, and Umeno, M. Room-temperature laser operation of AlGaAs/GaAs double heterostructures fabricated on Si substrates by metalorganic chemical vapor deposition. United States: N. p., 1986.
Web. doi:10.1063/1.96515.
Sakai, S, Soga, T, Takeyasu, M, & Umeno, M. Room-temperature laser operation of AlGaAs/GaAs double heterostructures fabricated on Si substrates by metalorganic chemical vapor deposition. United States. https://doi.org/10.1063/1.96515
Sakai, S, Soga, T, Takeyasu, M, and Umeno, M. 1986.
"Room-temperature laser operation of AlGaAs/GaAs double heterostructures fabricated on Si substrates by metalorganic chemical vapor deposition". United States. https://doi.org/10.1063/1.96515.
@article{osti_6192956,
title = {Room-temperature laser operation of AlGaAs/GaAs double heterostructures fabricated on Si substrates by metalorganic chemical vapor deposition},
author = {Sakai, S and Soga, T and Takeyasu, M and Umeno, M},
abstractNote = {AlGaAs/GaAs double heterostructure laser diodes have been fabricated on Si substrates using GaP/(GaP/GaAsP) superlattice/(GaAsP/GaAs) superlattice intermediate layers grown by metalorganic chemical vapor deposition. A threshold current density at 16.5 C and a characteristic temperature T0 of 4.9 kA/cmS and 179 K respectively have been obtained for the diode on Si substrate.},
doi = {10.1063/1.96515},
url = {https://www.osti.gov/biblio/6192956},
journal = {Appl. Phys. Lett.; (United States)},
number = ,
volume = 48:6,
place = {United States},
year = {Mon Feb 10 00:00:00 EST 1986},
month = {Mon Feb 10 00:00:00 EST 1986}
}
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