Self-similar domain growth in a chemisorbed overlayer in the presence of impurities
We observed a self-similar growth (scaling) of (2 x 1) oxygen domains chemisorbed on a W(112) surface at 0.5 monolayer (ML) coverage in the presence of random nitrogen impurities (less than or equal to5% ML) by using the time resolved high-resolution low-energy electron diffraction. The initial stage of domain growth after the system was quenched from a disordered state to an ordered state was shown to follow a power law, R-bar..cap alpha..t/sup n/ where R-bar is the average domain size at time t. The growth exponent n was measured to be < 1/2 and decreases with increasing N impurities, an indication of slowing down of the growth kinetics. The scaling function extracted from the angular profiles of superlattice beams was found to be an isotropic, universal function independent of up-quenching temperature. Breakdown of the scaling was observed after the termination of power law growth regime. This breakdown was believed to be caused by the change of domain size distribution as a result of pinning of domains by impurities. These results were compared with recent theoretical predictions and Monte-Carlo simulations.
- Research Organization:
- Department of Physics, Rensselaer Polytechnic Institute, Troy, New York 12180-3590
- OSTI ID:
- 6185011
- Journal Information:
- J. Vac. Sci. Technol., A; (United States), Vol. 7:3
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
OXYGEN
CHEMISORPTION
TUNGSTEN
SURFACE PROPERTIES
CRYSTAL GROWTH
DOMAIN STRUCTURE
ELECTRON DIFFRACTION
IMPURITIES
NITROGEN ADDITIONS
SCALING
ALLOYS
CHEMICAL REACTIONS
COHERENT SCATTERING
DIFFRACTION
ELEMENTS
METALS
NONMETALS
SCATTERING
SEPARATION PROCESSES
SORPTION
TRANSITION ELEMENTS
360102* - Metals & Alloys- Structure & Phase Studies