Effect of growth conditions on the stability of. cap alpha. -Sn grown on CdTe by molecular beam epitaxy

Journal Article · Mon May 29 00:00:00 EDT 1989 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.101125· OSTI ID:6182250

Reno, J L; Stephenson, L L

The effect of growth conditions on the stability of ..cap alpha..-Sn films grown by molecular beam epitaxy on CdTe is studied. The growth conditions considered are substrate orientation, thickness, growth rate, and substrate temperature. The transition temperature from ..cap alpha..-Sn to ..beta..-Sn, as determined by optical microscopy, is used as the measure of stability. It is shown that CdTe(110) is a somewhat better orientation than CdTe(100), and CdTe(111)B is totally unacceptable for the growth by molecular beam epitaxy of ..cap alpha..-Sn films. The transition temperature from ..cap alpha..-Sn to ..beta..-Sn shows a dependence on the total film thickness, with thinner films having a somewhat higher transition temperature than thicker. The quality of the films is the best when the growth rate is about 0.5 A/s and the growth temperature is about 75 /sup 0/C. Since the transition from ..cap alpha..-Sn to ..beta..-Sn starts at defects in the film, improving the quality of the film by lowering the growth rate and raising the growth temperature raises the transition temperature.

• Research Organization: Sandia National Laboratory, Albuquerque, New Mexico 87185
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 6182250
• Journal Information: Appl. Phys. Lett.; (United States), Vol. 54:22
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CADMIUM TELLURIDES
VAPOR DEPOSITED COATINGS
TIN
MOLECULAR BEAM EPITAXY
STABILITY
CRYSTAL STRUCTURE
MEDIUM TEMPERATURE
THICKNESS
THIN FILMS
CADMIUM COMPOUNDS
CHALCOGENIDES
COATINGS
DIMENSIONS
ELEMENTS
EPITAXY
FILMS
METALS
TELLURIDES
TELLURIUM COMPOUNDS
360602* - Other Materials- Structure & Phase Studies