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Title: High-efficiency photovoltaic cells

Abstract

High efficiency solar converters comprised of a two cell, non-lattice matched, monolithic stacked semiconductor configuration using optimum pairs of cells having bandgaps in the range 1.6 to 1.7 eV and 0.95 to 1.1 eV, and a method of fabrication thereof, are disclosed. The high band gap subcells are fabricated using metal organic chemical vapor deposition (MOCVD), liquid phase epitaxy (LPE) or molecular beam epitaxy (MBE) to produce the required AlGaAs layers of optimized composition, thickness and doping to produce high performance, heteroface homojunction devices. The low bandgap subcells are similarly fabricated from AlGa(As)Sb compositions by LPE, MBE or MOCVD. These subcells are then coupled to form a monolithic structure by an appropriate bonding technique which also forms the required transparent intercell ohmic contact (IOC) between the two subcells. Improved ohmic contacts to the high bandgap semiconductor structure can be formed by vacuum evaporating to suitable metal or semiconductor materials which react during laser annealing to form a low bandgap semiconductor which provides a low contact resistance structure.

Inventors:
;
Publication Date:
OSTI Identifier:
6179222
Application Number:
ON: DE83010513
Assignee:
ERA-08-029331; EDB-83-120413
DOE Contract Number:  
AC02-77CH00178
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; CONCENTRATOR SOLAR CELLS; DESIGN; FABRICATION; ALUMINIUM ARSENIDES; ANNEALING; CHEMICAL VAPOR DEPOSITION; ELECTRIC CONTACTS; GALLIUM ANTIMONIDES; GALLIUM ARSENIDES; LASER-RADIATION HEATING; LIQUID PHASE EPITAXY; MOLECULAR BEAM EPITAXY; VACUUM EVAPORATION; ALUMINIUM COMPOUNDS; ANTIMONY COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; CHEMICAL COATING; DEPOSITION; DIRECT ENERGY CONVERTERS; ELECTRICAL EQUIPMENT; EPITAXY; EQUIPMENT; EVAPORATION; GALLIUM COMPOUNDS; HEAT TREATMENTS; HEATING; PHASE TRANSFORMATIONS; PHOTOELECTRIC CELLS; PHOTOVOLTAIC CELLS; PLASMA HEATING; PNICTIDES; SOLAR CELLS; SOLAR EQUIPMENT; SURFACE COATING; 140501* - Solar Energy Conversion- Photovoltaic Conversion

Citation Formats

Yang, H.T., and Zehr, S.W. High-efficiency photovoltaic cells. United States: N. p., 1982. Web.
Yang, H.T., & Zehr, S.W. High-efficiency photovoltaic cells. United States.
Yang, H.T., and Zehr, S.W. Mon . "High-efficiency photovoltaic cells". United States.
@article{osti_6179222,
title = {High-efficiency photovoltaic cells},
author = {Yang, H.T. and Zehr, S.W.},
abstractNote = {High efficiency solar converters comprised of a two cell, non-lattice matched, monolithic stacked semiconductor configuration using optimum pairs of cells having bandgaps in the range 1.6 to 1.7 eV and 0.95 to 1.1 eV, and a method of fabrication thereof, are disclosed. The high band gap subcells are fabricated using metal organic chemical vapor deposition (MOCVD), liquid phase epitaxy (LPE) or molecular beam epitaxy (MBE) to produce the required AlGaAs layers of optimized composition, thickness and doping to produce high performance, heteroface homojunction devices. The low bandgap subcells are similarly fabricated from AlGa(As)Sb compositions by LPE, MBE or MOCVD. These subcells are then coupled to form a monolithic structure by an appropriate bonding technique which also forms the required transparent intercell ohmic contact (IOC) between the two subcells. Improved ohmic contacts to the high bandgap semiconductor structure can be formed by vacuum evaporating to suitable metal or semiconductor materials which react during laser annealing to form a low bandgap semiconductor which provides a low contact resistance structure.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Mon Jun 21 00:00:00 EDT 1982},
month = {Mon Jun 21 00:00:00 EDT 1982}
}