Plasmon-phonon-assisted electron-hole recombination in Si at very high carrier density
Journal Article
·
· Phys. Rev. B: Condens. Matter; (United States)
As the electron-hole density in Si, and the corresponding plasma frequency, increase to equal or exceed the indirect energy gap, a new recombination channel opens up. We calculate the rate of such a recombination process to first order in the phonon coupling and the emission of a single plasmon. We find that at such high densities (of the order of 10/sup 21//cm/sup 3/) this channel strongly inhibits further increase of the carrier density even a picosecond after the pump-laser pulse.
- Research Organization:
- Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831
- OSTI ID:
- 6178856
- Journal Information:
- Phys. Rev. B: Condens. Matter; (United States), Vol. 33:2
- Country of Publication:
- United States
- Language:
- English
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