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Title: In-gap optical absorption of amorphous Si/sub 3/N/sub 4/

Abstract

The optical absorption coefficient of thin films of chemically vapor deposited amorphous Si/sub 3/N/sub 4/ has been measured for photon energies ranging from 1.7 to 3.9 eV using photothermal deflection spectroscopy. From these data it can be inferred that these films contain between 10 and 100 ppm in-gap electronic states, a number consistent with estimates of the trapped charge density in metal-nitride-oxide-semiconductor devices. While other investigators have inferred the existence of well defined trap energies from electrical data, the present measurements yield only broad, rather featureless absorption spectra.

Authors:
;
Publication Date:
Research Org.:
Sandia National Laboratories, Albuquerque, New Mexico 87185
OSTI Identifier:
6175757
Resource Type:
Journal Article
Journal Name:
Appl. Phys. Lett.; (United States)
Additional Journal Information:
Journal Volume: 45:10
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; SILICON NITRIDES; ABSORPTION SPECTRA; OPACITY; CHEMICAL VAPOR DEPOSITION; ENERGY GAP; QUARTZ; SEMICONDUCTOR JUNCTIONS; THIN FILMS; TRAPS; CHALCOGENIDES; CHEMICAL COATING; DEPOSITION; FILMS; JUNCTIONS; MINERALS; NITRIDES; NITROGEN COMPOUNDS; OPTICAL PROPERTIES; OXIDE MINERALS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; PNICTIDES; SILICON COMPOUNDS; SILICON OXIDES; SPECTRA; SURFACE COATING; 360604* - Materials- Corrosion, Erosion, & Degradation

Citation Formats

Seager, C H, and Knapp, J A. In-gap optical absorption of amorphous Si/sub 3/N/sub 4/. United States: N. p., 1984. Web. doi:10.1063/1.95068.
Seager, C H, & Knapp, J A. In-gap optical absorption of amorphous Si/sub 3/N/sub 4/. United States. doi:10.1063/1.95068.
Seager, C H, and Knapp, J A. Thu . "In-gap optical absorption of amorphous Si/sub 3/N/sub 4/". United States. doi:10.1063/1.95068.
@article{osti_6175757,
title = {In-gap optical absorption of amorphous Si/sub 3/N/sub 4/},
author = {Seager, C H and Knapp, J A},
abstractNote = {The optical absorption coefficient of thin films of chemically vapor deposited amorphous Si/sub 3/N/sub 4/ has been measured for photon energies ranging from 1.7 to 3.9 eV using photothermal deflection spectroscopy. From these data it can be inferred that these films contain between 10 and 100 ppm in-gap electronic states, a number consistent with estimates of the trapped charge density in metal-nitride-oxide-semiconductor devices. While other investigators have inferred the existence of well defined trap energies from electrical data, the present measurements yield only broad, rather featureless absorption spectra.},
doi = {10.1063/1.95068},
journal = {Appl. Phys. Lett.; (United States)},
number = ,
volume = 45:10,
place = {United States},
year = {1984},
month = {11}
}