In-gap optical absorption of amorphous Si/sub 3/N/sub 4/

Journal Article · Thu Nov 15 00:00:00 EST 1984 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.95068· OSTI ID:6175757

Seager, C H; Knapp, J A

The optical absorption coefficient of thin films of chemically vapor deposited amorphous Si/sub 3/N/sub 4/ has been measured for photon energies ranging from 1.7 to 3.9 eV using photothermal deflection spectroscopy. From these data it can be inferred that these films contain between 10 and 100 ppm in-gap electronic states, a number consistent with estimates of the trapped charge density in metal-nitride-oxide-semiconductor devices. While other investigators have inferred the existence of well defined trap energies from electrical data, the present measurements yield only broad, rather featureless absorption spectra.

• Research Organization: Sandia National Laboratories, Albuquerque, New Mexico 87185
• OSTI ID: 6175757
• Journal Information: Appl. Phys. Lett.; (United States), Vol. 45:10
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
SILICON NITRIDES
ABSORPTION SPECTRA
OPACITY
CHEMICAL VAPOR DEPOSITION
ENERGY GAP
QUARTZ
SEMICONDUCTOR JUNCTIONS
THIN FILMS
TRAPS
CHALCOGENIDES
CHEMICAL COATING
DEPOSITION
FILMS
JUNCTIONS
MINERALS
NITRIDES
NITROGEN COMPOUNDS
OPTICAL PROPERTIES
OXIDE MINERALS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
SILICON COMPOUNDS
SILICON OXIDES
SPECTRA
SURFACE COATING
360604* - Materials- Corrosion
Erosion
& Degradation