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Title: Dose dependence of microstructural evolution in oxygen-ion-implanted silicon carbide

Abstract

Transmission electron microscopy (TEM) and Rutherford backscattering spectroscopy and ion channeling (RBS/C) have been used to characterize the microstructures and damage distributions in oxygen-ion-implanted silicon carbide (SiC). 6H[endash]SiC single crystals with [0001] orientation were irradiated with 180 keV O[sup +] ions at 650 hthinsp;[degree]C to fluences ranging from 0.2[times]10[sup 18] to 1.4[times]10[sup 18]/cm[sup 2]. No continuous buried amorphous layer was formed in the specimen with 0.2[times]10[sup 18] hthinsp;O[sup +]/cm[sup 2], although there were striated regions consisting of amorphous and crystalline structures at depth between 200 and 300 nm. A continuous buried amorphous layer appeared above 0.4[times]10[sup 18] hthinsp;O[sup +]/cm[sup 2], and the amorphous regions grew in size with increasing fluence. TEM and RBS/C results indicated that microstructures and elemental distributions change drastically between 0.7[times]10[sup 18] and 1.4[times]10[sup 18] hthinsp;O[sup +]/cm[sup 2]. [copyright] [ital 1999 American Institute of Physics.]

Authors:
 [1];  [2]
  1. (Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States) Department of Materials Science and Engineering, Kyushu University, Hakozaki, Fukuoka 812-8581 (Japan))
  2. (Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States))
Publication Date:
OSTI Identifier:
6174199
Alternate Identifier(s):
OSTI ID: 6174199
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 75:10; Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ION CHANNELING; ION IMPLANTATION; KEV RANGE 100-1000; MICROSTRUCTURE; OXYGEN; OXYGEN IONS; RUTHERFORD SCATTERING; SILICON CARBIDES; SILICON COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY; VACANCIES; CARBIDES; CARBON COMPOUNDS; CHANNELING; CHARGED PARTICLES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELASTIC SCATTERING; ELECTRON MICROSCOPY; ELEMENTS; ENERGY RANGE; IONS; KEV RANGE; MICROSCOPY; NONMETALS; POINT DEFECTS; SCATTERING 360602* -- Other Materials-- Structure & Phase Studies

Citation Formats

Ishimaru, M., and Sickafus, K.E. Dose dependence of microstructural evolution in oxygen-ion-implanted silicon carbide. United States: N. p., 1999. Web. doi:10.1063/1.124704.
Ishimaru, M., & Sickafus, K.E. Dose dependence of microstructural evolution in oxygen-ion-implanted silicon carbide. United States. doi:10.1063/1.124704.
Ishimaru, M., and Sickafus, K.E. Wed . "Dose dependence of microstructural evolution in oxygen-ion-implanted silicon carbide". United States. doi:10.1063/1.124704.
@article{osti_6174199,
title = {Dose dependence of microstructural evolution in oxygen-ion-implanted silicon carbide},
author = {Ishimaru, M. and Sickafus, K.E.},
abstractNote = {Transmission electron microscopy (TEM) and Rutherford backscattering spectroscopy and ion channeling (RBS/C) have been used to characterize the microstructures and damage distributions in oxygen-ion-implanted silicon carbide (SiC). 6H[endash]SiC single crystals with [0001] orientation were irradiated with 180 keV O[sup +] ions at 650 hthinsp;[degree]C to fluences ranging from 0.2[times]10[sup 18] to 1.4[times]10[sup 18]/cm[sup 2]. No continuous buried amorphous layer was formed in the specimen with 0.2[times]10[sup 18] hthinsp;O[sup +]/cm[sup 2], although there were striated regions consisting of amorphous and crystalline structures at depth between 200 and 300 nm. A continuous buried amorphous layer appeared above 0.4[times]10[sup 18] hthinsp;O[sup +]/cm[sup 2], and the amorphous regions grew in size with increasing fluence. TEM and RBS/C results indicated that microstructures and elemental distributions change drastically between 0.7[times]10[sup 18] and 1.4[times]10[sup 18] hthinsp;O[sup +]/cm[sup 2]. [copyright] [ital 1999 American Institute of Physics.]},
doi = {10.1063/1.124704},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = ,
volume = 75:10,
place = {United States},
year = {1999},
month = {9}
}