Properties of In/sub x/Ga/sub 1-x/As-GaAs strained-layer quantum-well-heterostructure injection lasers

Journal Article · Tue Jan 01 00:00:00 EST 1985 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.335391· OSTI ID:6173151

Laidig, W D; Lin, Y F; Caldwell, P J

Some of the properties of In/sub x/Ga/sub 1-x/As-GaAs strained-layer quantum-well-heterostructure (SL-QWH) injection lasers are described. The laser structures are grown by molecular beam epitaxy on n/sup +/ GaAs substrates. Following the growth of a 0.5-..mu..m n/sup +/ GaAs buffer layer, a 2-..mu..m Al/sub 0.45/Ga/sub 0.55/As n-type cladding layer is grown. Next an undoped active region is grown, consisting of approx.1600 A of GaAs with three approx.40-A In/sub 0.35/Ga/sub 0.65/As quantum wells separated by two approx.30-A GaAs barrier layers. Following the active region, a 2-..mu..m Al/sub 0.45/Ga/sub 0.65/As p-type cladding layer and a 0.5-..mu..m p/sup +/ GaAs cap layer are grown. Broad-area SL-QWH lasers operate under pulsed conditions at room temperature with threshold current densities as low as 465 A/cm/sup 2/. The operating wavelength is near 1 ..mu..m. Lasers have operated for up to 1000 h with less than 25% increase in current density to maintain a constant output of 2 mW/facet. Data are also presented describing the temperature dependence of threshold current density. Values of T/sub 0/ between 80 and 103 K are observed near room temperature, indicating that these SL-QWH lasers are somewhat more sensitive to temperature changes than conventional laser structures.

• Research Organization: Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695-7911
• OSTI ID: 6173151
• Journal Information: J. Appl. Phys.; (United States), Vol. 57:1
• Country of Publication: United States
• Language: English

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ALUMINIUM ARSENIDES
MOLECULAR BEAM EPITAXY
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INDIUM ARSENIDES
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OPERATION
TEMPERATURE EFFECTS
THRESHOLD CURRENT
HETEROJUNCTIONS
TEMPERATURE DEPENDENCE
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INDIUM COMPOUNDS
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420300* - Engineering- Lasers- (-1989)