Charge collection and noise analysis of heavily irradiated silicon detectors

Journal Article · Wed Apr 01 00:00:00 EST 1998 · IEEE Transactions on Nuclear Science

DOI:https://doi.org/10.1109/23.664165· OSTI ID:616409

Borchi, E; Bruzzi, M; Pirollo, S; Sciortino, S ^[1]; Leroy, C ^[2]

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1. I.N.F.N., Firenze (Italy). Dipt. di Energetica
2. Univ. de Montreal, Quebec (Canada)

Measurements performed on high-resistivity silicon detectors irradiated with proton and neutron fluences, up to 3.5 {times} 10{sup 14} p/cm{sup 2}, and 4 {times} 10{sup 15} n/cm{sup 2} respectively, are presented. The charge collection efficiency (CCE) and the output noise of the devices have been measured to carry out a detector performance study after irradiation. The CCE is found to slowly decrease for fluences increasing up to approximately 1.8 {times} 10{sup 14} p/cm{sup 2}. For higher particle fluences, the device inefficiency increases rapidly because full depletion could not be reached (up to 75% for the highest fluence: 4 {times} 10{sup 15} n/cm{sup 2}). A complete analysis of the noise of the irradiated devices has been carried out assuming a simple model which correlates the main noise sources to the fluence and the leakage current. A linear dependence of the square of the noise amplitude on the fluence has been observed: a value of the leakage current damage constant has been found to be in good agreement with the values reported in literature, obtained with current-voltage (IV) analysis. An extension of the noise analysis is carried out considering the detectors irradiated with very high fluences, up to 4 {times} 10{sup 15} n/cm{sup 2}.

• OSTI ID: 616409
• Journal Information: IEEE Transactions on Nuclear Science, Vol. 45, Issue 2; Other Information: PBD: Apr 1998
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
SI SEMICONDUCTOR DETECTORS
PHYSICAL RADIATION EFFECTS
PERFORMANCE
ELECTRICAL PROPERTIES
CHARGE COLLECTION
NOISE