Fracture properties of GaAs-AlAs superlattices studied by atomic force microscopy and scanning electron microscopy

Castell, M R; Howie, A; Ritchie, D A

doi:10.1016/S1359-6454(97)00242-5

Title: Fracture properties of GaAs-AlAs superlattices studied by atomic force microscopy and scanning electron microscopy

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Abstract

GaAs-AlAs superlattices with periodicities of up to 200 nm were cleaved to expose (110) faces. These surfaces were studied using high resolution scanning electron microscopy where the secondary electron images reveal contrast between the GaAs and AlAs layers and also indicate that the AlAs layers are topographically raised with respect to the GaAs. Atomic force microscopy of the same samples shows that the AlAs ridges can extend as far as 55 nm beyond the GaAs surface. Further secondary electron images of cross-sections of plastically deformed GaAs-AlAs superlattices reveal that the AlAs layers can undergo severe deformation whereas the GaAs layers fracture more readily. It is proposed that the AlAs protrusions on the (110) cleavage surface are due to the fracture behavior of the superlattice as well as oxidation effects.

Authors:

Castell, M R; Howie, A; Ritchie, D A ^[1]

Cavendish Lab., Cambridge (United Kingdom)

Publication Date:: Mon Jan 05 00:00:00 EST 1998

OSTI Identifier:: 616197

Resource Type:: Journal Article

Journal Name:: Acta Materialia

Additional Journal Information:: Journal Volume: 46; Journal Issue: 2; Other Information: PBD: 5 Jan 1998

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; GALLIUM ARSENIDES; ALUMINIUM ARSENIDES; FRACTURE PROPERTIES; SUPERLATTICES; DEFORMATION

Citation Formats


                    Castell, M R, Howie, A, and Ritchie, D A. Fracture properties of GaAs-AlAs superlattices studied by atomic force microscopy and scanning electron microscopy.  United States: N. p., 1998. 
        Web.  doi:10.1016/S1359-6454(97)00242-5.

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                    Castell, M R, Howie, A, & Ritchie, D A. Fracture properties of GaAs-AlAs superlattices studied by atomic force microscopy and scanning electron microscopy.  United States.  https://doi.org/10.1016/S1359-6454(97)00242-5

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                    Castell, M R, Howie, A, and Ritchie, D A. 1998.  
        "Fracture properties of GaAs-AlAs superlattices studied by atomic force microscopy and scanning electron microscopy".  United States.  https://doi.org/10.1016/S1359-6454(97)00242-5.

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@article{osti_616197,

  title        = {Fracture properties of GaAs-AlAs superlattices studied by atomic force microscopy and scanning electron microscopy},

  author       = {Castell, M R and Howie, A and Ritchie, D A},

  abstractNote = {GaAs-AlAs superlattices with periodicities of up to 200 nm were cleaved to expose (110) faces. These surfaces were studied using high resolution scanning electron microscopy where the secondary electron images reveal contrast between the GaAs and AlAs layers and also indicate that the AlAs layers are topographically raised with respect to the GaAs. Atomic force microscopy of the same samples shows that the AlAs ridges can extend as far as 55 nm beyond the GaAs surface. Further secondary electron images of cross-sections of plastically deformed GaAs-AlAs superlattices reveal that the AlAs layers can undergo severe deformation whereas the GaAs layers fracture more readily. It is proposed that the AlAs protrusions on the (110) cleavage surface are due to the fracture behavior of the superlattice as well as oxidation effects.},

  doi          = {10.1016/S1359-6454(97)00242-5},

  url          = {https://www.osti.gov/biblio/616197},
  journal      = {Acta Materialia},
number       = 2,

  volume       = 46,

  place        = {United States},

  year         = {Mon Jan 05 00:00:00 EST 1998},

  month        = {Mon Jan 05 00:00:00 EST 1998}

}

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