Physics and technology of conductivity-modulated power MOSFET's

Miscellaneous · Mon Jan 01 00:00:00 EST 1990

OSTI ID:6156722

Liu, D K.Y.

The main performance trade-off in power devices has been between the ON-resistance, or the forward conduction capability, and the gate turn-on/turn-off switching speed. Two device structures that best illustrate this trade-off are the power MOSFET and the insulated gate bipolar transistor (IGBT). The power MOSFET offers high inherent switching speed and low input gate power. The IGBT provides significantly lower ON-resistance than the MOSFET due to conductivity modulation. This work describes a new conductivity-modulated power DMOS structure (CMDMOS) that features a minority carrier injector adjacent to the current path which allows, for the first time, electrical control of the switching speed/ON-resistance trade-off. A simple analytical model for the ON-resistance of the device is also presented. In this model, the injector hole concentration and the extent of conductivity modulation in the drift region are obtained as functions of the injector current, the drain current and the device geometry. This work leads to a better understanding of the effect of conductivity modulation, and results in a new power device which provides substantial flexibility in trading off ON-resistance and switching speed.

• Research Organization: Stanford Univ., CA (USA)
• OSTI ID: 6156722
• Resource Relation: Other Information: Thesis (Ph. D.)
• Country of Publication: United States
• Language: English

Related Subjects

24 POWER TRANSMISSION AND DISTRIBUTION
MOSFET
DESIGN
TRANSISTORS
ELECTRIC CONDUCTIVITY
GEOMETRY
MATHEMATICAL MODELS
MODULATION
OPERATION
PERFORMANCE
POWER SYSTEMS
PROCESS CONTROL
SWITCHING CIRCUITS
TECHNOLOGY ASSESSMENT
TIME DEPENDENCE
CONTROL
ELECTRICAL PROPERTIES
ELECTRONIC CIRCUITS
ENERGY SYSTEMS
FIELD EFFECT TRANSISTORS
MATHEMATICS
MOS TRANSISTORS
PHYSICAL PROPERTIES
SEMICONDUCTOR DEVICES
240100* - Power Systems- (1990-)