Research at Lincoln Laboratory leading up to the development of the injection laser in 1962

Journal Article · Mon Jun 01 00:00:00 EDT 1987 · IEEE J. Quant. Electron.; (United States)

DOI:https://doi.org/10.1109/JQE.1987.1073430· OSTI ID:6154476

Rediker, R H

In 1958 the semiconductor device group at Lincoln Laboratory began to concentrate its efforts on exploiting GaAs. These efforts, in addition to yielding diodes with ns switching speeds, led to the development in early 1962 of diodes which emitted near-bandgap radiation with very high efficiency, and to the development in October 1962 of the diode laser. The theory of the semiconductor laser developed at Lincoln Laboratory in the mid-to-late 1950's provided the foundation necessary for the design of the diode laser structure after the highly efficient production of near-bandgap radiation was demonstrated.

• Research Organization: Lincoln Lab., Massachusetts Institute of Technology, Lexington, MA 02173
• OSTI ID: 6154476
• Journal Information: IEEE J. Quant. Electron.; (United States), Vol. QE-23:6
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
SEMICONDUCTOR LASERS
DESIGN
HISTORICAL ASPECTS
OPERATION
EFFICIENCY
GALLIUM ARSENIDES
GRADED BAND GAPS
LASER RADIATION
RESEARCH PROGRAMS
SEMICONDUCTOR DIODES
ARSENIC COMPOUNDS
ARSENIDES
ELECTROMAGNETIC RADIATION
GALLIUM COMPOUNDS
LASERS
PNICTIDES
RADIATIONS
SEMICONDUCTOR DEVICES
420300* - Engineering- Lasers- (-1989)