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Title: Radiation effects in 1. 06-. mu. m InGaAs LED's and Si photodiodes

Abstract

Because of the low-intrinsic and radiation-induced attenuation losses in glass fibers in the wavelength range 1.0--1.3 ..mu..m, emitters and detectors operating in this range are of practical importance for radiation-environment applications. We have studied the effects of both ..gamma.. and neutron irradiation on the properties of InGaAs LED's emitting at 1.06 ..mu..m and Si photodiode detectors optimized for this wavelength. While the preirradiation light output of the InGaAs LED's is low relative to many GaAs LED's, the InGaAs devices exhibit less sensitivity to radiation than the most radiation-hardened GaAs LED's. No significant neutron-induced light-output degradation is observed below 1 x 10/sup 13/ n/cm/sup 2/, while 2 x 10/sup 7/ Co-60 rads are required before any ..gamma..-induced degradation is observed. In addition, a significant portion of the ..gamma..-induced light-output degradation can be recovered by applying forward-bias currents of the order of 50 mA in magnitude. Although ..gamma.. irradiation up to 2 x 10/sup 8/ rads has essentially no effect on the photodiodes, neutron fluences above 2 x 10/sup 14/ n/cm/sup 2/ cause a reduction in responsivity. Analysis of the neutron-induced increases in the photodiode leakage current with the guard ring attached reveals a lifetime-damage constant product of 4 x 10/sup -12/more » cm/sup 2//n. Laboratory isolators made up of these emitters and detectors have typical preirradiation current-transfer ratios of 5 x 10/sup -4/ which decrease by a factor of 10 after an irradiation of 1.5 x 10/sup 14/ n/cm/sup 2/.« less

Authors:
Publication Date:
Research Org.:
Sandia Laboratories, Albuquerque, New Mexico 87185
OSTI Identifier:
6152691
Resource Type:
Journal Article
Journal Name:
J. Appl. Phys.; (United States)
Additional Journal Information:
Journal Volume: 50:8
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; LIGHT EMITTING DIODES; PHYSICAL RADIATION EFFECTS; PHOTODIODES; ATTENUATION; GALLIUM ARSENIDES; INDIUM; IRRADIATION; LOSSES; RADIATION DETECTORS; RADIOLYSIS; SENSITIVITY; SILICON; ARSENIC COMPOUNDS; ARSENIDES; CHEMICAL RADIATION EFFECTS; CHEMICAL REACTIONS; CHEMISTRY; DECOMPOSITION; ELEMENTS; GALLIUM COMPOUNDS; MEASURING INSTRUMENTS; METALS; PNICTIDES; RADIATION CHEMISTRY; RADIATION EFFECTS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SEMIMETALS; 440200* - Radiation Effects on Instrument Components, Instruments, or Electronic Systems

Citation Formats

Barnes, C E. Radiation effects in 1. 06-. mu. m InGaAs LED's and Si photodiodes. United States: N. p., 1979. Web. doi:10.1063/1.326619.
Barnes, C E. Radiation effects in 1. 06-. mu. m InGaAs LED's and Si photodiodes. United States. doi:10.1063/1.326619.
Barnes, C E. Wed . "Radiation effects in 1. 06-. mu. m InGaAs LED's and Si photodiodes". United States. doi:10.1063/1.326619.
@article{osti_6152691,
title = {Radiation effects in 1. 06-. mu. m InGaAs LED's and Si photodiodes},
author = {Barnes, C E},
abstractNote = {Because of the low-intrinsic and radiation-induced attenuation losses in glass fibers in the wavelength range 1.0--1.3 ..mu..m, emitters and detectors operating in this range are of practical importance for radiation-environment applications. We have studied the effects of both ..gamma.. and neutron irradiation on the properties of InGaAs LED's emitting at 1.06 ..mu..m and Si photodiode detectors optimized for this wavelength. While the preirradiation light output of the InGaAs LED's is low relative to many GaAs LED's, the InGaAs devices exhibit less sensitivity to radiation than the most radiation-hardened GaAs LED's. No significant neutron-induced light-output degradation is observed below 1 x 10/sup 13/ n/cm/sup 2/, while 2 x 10/sup 7/ Co-60 rads are required before any ..gamma..-induced degradation is observed. In addition, a significant portion of the ..gamma..-induced light-output degradation can be recovered by applying forward-bias currents of the order of 50 mA in magnitude. Although ..gamma.. irradiation up to 2 x 10/sup 8/ rads has essentially no effect on the photodiodes, neutron fluences above 2 x 10/sup 14/ n/cm/sup 2/ cause a reduction in responsivity. Analysis of the neutron-induced increases in the photodiode leakage current with the guard ring attached reveals a lifetime-damage constant product of 4 x 10/sup -12/ cm/sup 2//n. Laboratory isolators made up of these emitters and detectors have typical preirradiation current-transfer ratios of 5 x 10/sup -4/ which decrease by a factor of 10 after an irradiation of 1.5 x 10/sup 14/ n/cm/sup 2/.},
doi = {10.1063/1.326619},
journal = {J. Appl. Phys.; (United States)},
number = ,
volume = 50:8,
place = {United States},
year = {1979},
month = {8}
}