Use of Raman spectroscopy to characterize strain in III--V epilayers: Application to InAs on GaAs(001) grown by molecular-beam epitaxy

Diebold, A C; Steinhauser, S W; Mariella, Jr, R P

doi:10.1116/1.584752

Title: Use of Raman spectroscopy to characterize strain in III--V epilayers: Application to InAs on GaAs(001) grown by molecular-beam epitaxy

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Abstract

Strain in thin layers of molecular-beam epitaxy (MBE) grown InAs on GaAs(001) was characterized by both Raman spectroscopy and double crystal x-ray diffraction (DCD). The goal of this study was to evaluate the use of Raman spectroscopy as a method of strain determination and compare it to DCD. Recent results of Burns et al., for In/sub x/Ga/sub 1-//sub x/As proved that Raman spectroscopy could be an important in situ analysis method for MBE (G. Burns, C. R. Wie, F. H. Dacol, G. D. Pettit, Appl. Phys. Lett. 51, 1919 (1987)). We find that Raman spectroscopy has several advantages over DCD. Raman data samples the stress in a much thinner volume than DCD, allowing one to determine when a surface layer of the thin film is no longer under stress. Films that are highly lattice mismatched with the substrate have a large number of defects at the substrate/epilayer interface. Raman analysis determines straain in a more defect free layer of these films when the layer thickness is greater than t/sub c/, the critical thickness. DCD samples an average strain over the entire thickness of most semiconductor films. There are several disadvantages in the use of Raman spectroscopy as a strain analysismore »« less

Authors:: Diebold, A C; Steinhauser, S W; Mariella, Jr, R P

Publication Date:: Wed Mar 01 00:00:00 EST 1989

Research Org.:: Allied-Signal, Inc., Electronic Materials and Devices Laboratory, Morristown, 07960 New Jersey

OSTI Identifier:: 6150279

Resource Type:: Journal Article

Journal Name:: J. Vac. Sci. Technol., B; (United States)

Additional Journal Information:: Journal Volume: 7:2

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; GALLIUM ARSENIDES; COATINGS; INDIUM ARSENIDES; CRYSTAL GROWTH; MOLECULAR BEAM EPITAXY; STRAINS; MEASURING METHODS; CRYSTAL FACES; FILMS; HETEROJUNCTIONS; LATTICE PARAMETERS; LAYERS; RAMAN SPECTROSCOPY; SUBSTRATES; X-RAY DIFFRACTION; ARSENIC COMPOUNDS; ARSENIDES; COHERENT SCATTERING; DIFFRACTION; EPITAXY; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; JUNCTIONS; LASER SPECTROSCOPY; PNICTIDES; SCATTERING; SEMICONDUCTOR JUNCTIONS; SPECTROSCOPY; 360603* - Materials- Properties

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                    Diebold, A C, Steinhauser, S W, and Mariella, Jr, R P. Use of Raman spectroscopy to characterize strain in III--V epilayers: Application to InAs on GaAs(001) grown by molecular-beam epitaxy.  United States: N. p., 1989. 
        Web.  doi:10.1116/1.584752.

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                    Diebold, A C, Steinhauser, S W, & Mariella, Jr, R P. Use of Raman spectroscopy to characterize strain in III--V epilayers: Application to InAs on GaAs(001) grown by molecular-beam epitaxy.  United States.  https://doi.org/10.1116/1.584752

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                    Diebold, A C, Steinhauser, S W, and Mariella, Jr, R P. 1989.  
        "Use of Raman spectroscopy to characterize strain in III--V epilayers: Application to InAs on GaAs(001) grown by molecular-beam epitaxy".  United States.  https://doi.org/10.1116/1.584752.

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@article{osti_6150279,

  title        = {Use of Raman spectroscopy to characterize strain in III--V epilayers: Application to InAs on GaAs(001) grown by molecular-beam epitaxy},

  author       = {Diebold, A C and Steinhauser, S W and Mariella, Jr, R P},

  abstractNote = {Strain in thin layers of molecular-beam epitaxy (MBE) grown InAs on GaAs(001) was characterized by both Raman spectroscopy and double crystal x-ray diffraction (DCD). The goal of this study was to evaluate the use of Raman spectroscopy as a method of strain determination and compare it to DCD. Recent results of Burns et al., for In/sub x/Ga/sub 1-//sub x/As proved that Raman spectroscopy could be an important in situ analysis method for MBE (G. Burns, C. R. Wie, F. H. Dacol, G. D. Pettit, Appl. Phys. Lett. 51, 1919 (1987)). We find that Raman spectroscopy has several advantages over DCD. Raman data samples the stress in a much thinner volume than DCD, allowing one to determine when a surface layer of the thin film is no longer under stress. Films that are highly lattice mismatched with the substrate have a large number of defects at the substrate/epilayer interface. Raman analysis determines straain in a more defect free layer of these films when the layer thickness is greater than t/sub c/, the critical thickness. DCD samples an average strain over the entire thickness of most semiconductor films. There are several disadvantages in the use of Raman spectroscopy as a strain analysis method. We found that the materials parameters of InAs required to calculate the strain from the shift in the optical phonon energy of the epilayer were not accurately known. Quantitative strain determination by Raman spectroscopy depends on accurate values of the phonon deformation potentials of InAs and other III--V compounds of interest. Also, DCD is capable of determining much smaller strains than Raman spectroscopy.},

  doi          = {10.1116/1.584752},

  url          = {https://www.osti.gov/biblio/6150279},
  journal      = {J. Vac. Sci. Technol., B; (United States)},
number       = ,

  volume       = 7:2,

  place        = {United States},

  year         = {Wed Mar 01 00:00:00 EST 1989},

  month        = {Wed Mar 01 00:00:00 EST 1989}

}

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