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Title: Effect of impurities on the photovoltaic behavior of solar-grade silicon. I. The role of boron and phosphorous primary impurities in p-type single-crystal silicon

Abstract

The electrical and photovoltaic properties of partially compensated p-type silicon samples have been investigated in order to understand the influence of the contemporaneous presence of donors and acceptors on the behavior of majority and minority carriers. It has been shown that the majority carrier properties are only slightly influenced by the presence of donors in p-type samples and that the minority carrier properties depend on the excess acceptor concentration up to an excess donor concentration close to 5 x 10 to the 16th at./cu cm. A theoretical explanation of these features has been proposed, on the base of the Shockley-Read-Hall model of recombination at shallow traps and donor-acceptor pairs formation. 18 references.

Authors:
;
Publication Date:
Research Org.:
Milano Universita, Italy
OSTI Identifier:
6148009
Resource Type:
Journal Article
Journal Name:
J. Electrochem. Soc.; (United States)
Additional Journal Information:
Journal Volume: 131
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; SILICON; ELECTRICAL PROPERTIES; SILICON SOLAR CELLS; FABRICATION; CARRIER MOBILITY; CRYSTAL GROWTH; HALL EFFECT; IMPURITIES; P-TYPE CONDUCTORS; DIRECT ENERGY CONVERTERS; ELEMENTS; EQUIPMENT; MATERIALS; MOBILITY; PHOTOELECTRIC CELLS; PHOTOVOLTAIC CELLS; PHYSICAL PROPERTIES; SEMICONDUCTOR MATERIALS; SEMIMETALS; SOLAR CELLS; SOLAR EQUIPMENT; 140501* - Solar Energy Conversion- Photovoltaic Conversion

Citation Formats

Pizzini, S, and Calligarich, C. Effect of impurities on the photovoltaic behavior of solar-grade silicon. I. The role of boron and phosphorous primary impurities in p-type single-crystal silicon. United States: N. p., 1984. Web. doi:10.1149/1.2116033.
Pizzini, S, & Calligarich, C. Effect of impurities on the photovoltaic behavior of solar-grade silicon. I. The role of boron and phosphorous primary impurities in p-type single-crystal silicon. United States. https://doi.org/10.1149/1.2116033
Pizzini, S, and Calligarich, C. Sat . "Effect of impurities on the photovoltaic behavior of solar-grade silicon. I. The role of boron and phosphorous primary impurities in p-type single-crystal silicon". United States. https://doi.org/10.1149/1.2116033.
@article{osti_6148009,
title = {Effect of impurities on the photovoltaic behavior of solar-grade silicon. I. The role of boron and phosphorous primary impurities in p-type single-crystal silicon},
author = {Pizzini, S and Calligarich, C},
abstractNote = {The electrical and photovoltaic properties of partially compensated p-type silicon samples have been investigated in order to understand the influence of the contemporaneous presence of donors and acceptors on the behavior of majority and minority carriers. It has been shown that the majority carrier properties are only slightly influenced by the presence of donors in p-type samples and that the minority carrier properties depend on the excess acceptor concentration up to an excess donor concentration close to 5 x 10 to the 16th at./cu cm. A theoretical explanation of these features has been proposed, on the base of the Shockley-Read-Hall model of recombination at shallow traps and donor-acceptor pairs formation. 18 references.},
doi = {10.1149/1.2116033},
url = {https://www.osti.gov/biblio/6148009}, journal = {J. Electrochem. Soc.; (United States)},
number = ,
volume = 131,
place = {United States},
year = {1984},
month = {9}
}