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Title: Effect of indium and silicon doping on the deformation behavior of GaAs single crystals

Abstract

Doping melt-grown GaAs with high concentrations of indium or silicon has been reported to drastically reduce the dislocation densities, from 10/sup 3/ to 10/sup 6/ cm/sup -2/ to less than 10/sup 2/ cm/sup -2/. To study the effect of doping on the deformation behavior of GaAs single crystals, dynamical compression tests at constant strain rate are performed for temperatures ranging from 350 to 1100/sup 0/C. For > 800/sup 0/C, samples are encapsulated in B/sub 2/O/sub 3/. The crystals were grown by the Liquid Encapsulated Czochralski (LEC) technique under identical experimental conditions. Compared to the undoped material, indium-doped GaAs is harder at high temperatures, whereas GaAs:Si is softer. Results show that In and Si behave differently with respect to the deformation tests.

Authors:
Publication Date:
Research Org.:
Lawrence Berkeley Lab., CA (USA)
OSTI Identifier:
6145613
Report Number(s):
LBL-20947
ON: DE86008395
DOE Contract Number:  
AC03-76SF00098
Resource Type:
Technical Report
Resource Relation:
Other Information: Portions of this document are illegible in microfiche products. Thesis
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; GALLIUM ARSENIDES; DEFORMATION; COMPRESSION; CRYSTAL DOPING; DISLOCATIONS; DOPED MATERIALS; INDIUM ADDITIONS; METALLURGICAL EFFECTS; MONOCRYSTALS; SILICON ADDITIONS; ALLOYS; ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; CRYSTALS; GALLIUM COMPOUNDS; INDIUM ALLOYS; LINE DEFECTS; MATERIALS; PNICTIDES; SILICON ALLOYS; 360603* - Materials- Properties

Citation Formats

Tabache, M G. Effect of indium and silicon doping on the deformation behavior of GaAs single crystals. United States: N. p., 1986. Web.
Tabache, M G. Effect of indium and silicon doping on the deformation behavior of GaAs single crystals. United States.
Tabache, M G. Wed . "Effect of indium and silicon doping on the deformation behavior of GaAs single crystals". United States.
@article{osti_6145613,
title = {Effect of indium and silicon doping on the deformation behavior of GaAs single crystals},
author = {Tabache, M G},
abstractNote = {Doping melt-grown GaAs with high concentrations of indium or silicon has been reported to drastically reduce the dislocation densities, from 10/sup 3/ to 10/sup 6/ cm/sup -2/ to less than 10/sup 2/ cm/sup -2/. To study the effect of doping on the deformation behavior of GaAs single crystals, dynamical compression tests at constant strain rate are performed for temperatures ranging from 350 to 1100/sup 0/C. For > 800/sup 0/C, samples are encapsulated in B/sub 2/O/sub 3/. The crystals were grown by the Liquid Encapsulated Czochralski (LEC) technique under identical experimental conditions. Compared to the undoped material, indium-doped GaAs is harder at high temperatures, whereas GaAs:Si is softer. Results show that In and Si behave differently with respect to the deformation tests.},
doi = {},
url = {https://www.osti.gov/biblio/6145613}, journal = {},
number = ,
volume = ,
place = {United States},
year = {1986},
month = {1}
}

Technical Report:
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