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Title: 100 kV thermal field emission electron beam lithography tool for high-resolution x-ray mask patterning

Abstract

High-voltage ( > 50 kV) electron beam lithography (EBL) is the preferred technique for fabrication of additive-process x-ray masks, because the high-voltage minimizes scattering in the resist and membrane, resulting in better resolution, straighter sidewalls, and reduced proximity effect. The authors have designed and built a new 100 kV column for a vector scan EBL machine for the purpose of writing high-resolution, high-precision x-ray masks in order to explore the technological and fundamental limits of x-ray lithography. The column features a 100 kV thermal field emission gun with an electrostatic condenser lens, conjugate blanking, and a liquid-cooled magnetic final lens with high-precision double magnetic deflection. The two-lens optics provides a beam diameter of 30 nm at a current of 5 nA, sufficient to expose moderately sensitive resists at pixel rates approaching the maximum deflection speed of 10 MHz. Results obtained include proximity corrected, complex patterns in thin resist with feature sizes down to 50 nm. Comparisons of proximity effects, exposure parameters, and actual resist profiles, show that 100 kV is clearly superior to 50 kV and even 75 kV for feature sizes below 0.25 [mu]m in thick (0.75 tim) resist. Excellent linewidth control has been obtained on plated gold x-raymore » masks with feature sizes as small as 75 nm. Problems of patterning nanometer features with aspect ratios as high as 10:1, which include forward scattering, development effects, and plating effects, are discussed. 13 refs., 7 figs.« less

Authors:
; ; ; ; ;  [1]
  1. IBM Thomas J. Watson Research Center, Yorktown Heights, NY (United States)
OSTI Identifier:
6133812
Report Number(s):
CONF-920575-
Journal ID: ISSN 0734-211X; CODEN: JVTBD9
Resource Type:
Conference
Journal Name:
Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States)
Additional Journal Information:
Journal Volume: 10:6; Conference: Symposium on electron, ion and photon beams, Orlando, FL (United States), 26-29 May 1992; Journal ID: ISSN 0734-211X
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 42 ENGINEERING; COATINGS; ELECTRON BEAM MACHINING; MACHINE TOOLS; PERFORMANCE TESTING; SPECIFICATIONS; FIELD EMISSION; MASKING; SURFACE FINISHING; EMISSION; MACHINING; TESTING; TOOLS; 360601* - Other Materials- Preparation & Manufacture; 420200 - Engineering- Facilities, Equipment, & Techniques

Citation Formats

McCord, M A, Viswanathan, R, Hohn, F J, Wilson, A D, Naumann, R, and Newman, T H. 100 kV thermal field emission electron beam lithography tool for high-resolution x-ray mask patterning. United States: N. p., Web.
McCord, M A, Viswanathan, R, Hohn, F J, Wilson, A D, Naumann, R, & Newman, T H. 100 kV thermal field emission electron beam lithography tool for high-resolution x-ray mask patterning. United States.
McCord, M A, Viswanathan, R, Hohn, F J, Wilson, A D, Naumann, R, and Newman, T H. . "100 kV thermal field emission electron beam lithography tool for high-resolution x-ray mask patterning". United States.
@article{osti_6133812,
title = {100 kV thermal field emission electron beam lithography tool for high-resolution x-ray mask patterning},
author = {McCord, M A and Viswanathan, R and Hohn, F J and Wilson, A D and Naumann, R and Newman, T H},
abstractNote = {High-voltage ( > 50 kV) electron beam lithography (EBL) is the preferred technique for fabrication of additive-process x-ray masks, because the high-voltage minimizes scattering in the resist and membrane, resulting in better resolution, straighter sidewalls, and reduced proximity effect. The authors have designed and built a new 100 kV column for a vector scan EBL machine for the purpose of writing high-resolution, high-precision x-ray masks in order to explore the technological and fundamental limits of x-ray lithography. The column features a 100 kV thermal field emission gun with an electrostatic condenser lens, conjugate blanking, and a liquid-cooled magnetic final lens with high-precision double magnetic deflection. The two-lens optics provides a beam diameter of 30 nm at a current of 5 nA, sufficient to expose moderately sensitive resists at pixel rates approaching the maximum deflection speed of 10 MHz. Results obtained include proximity corrected, complex patterns in thin resist with feature sizes down to 50 nm. Comparisons of proximity effects, exposure parameters, and actual resist profiles, show that 100 kV is clearly superior to 50 kV and even 75 kV for feature sizes below 0.25 [mu]m in thick (0.75 tim) resist. Excellent linewidth control has been obtained on plated gold x-ray masks with feature sizes as small as 75 nm. Problems of patterning nanometer features with aspect ratios as high as 10:1, which include forward scattering, development effects, and plating effects, are discussed. 13 refs., 7 figs.},
doi = {},
journal = {Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States)},
issn = {0734-211X},
number = ,
volume = 10:6,
place = {United States},
year = {},
month = {}
}

Conference:
Other availability
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