Operation of the semiconductor-insulator-semiconductor solar cell: Experiment

Journal Article · Sun Apr 01 00:00:00 EST 1979 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.326196· OSTI ID:6128567

Shewchun, J; Dubow, J; Wilmsen, C W; Singh, R; Burk, D; Wager, J F

We have reported on the theory of semiconductor-insulator-semiconductor (SIS) solar cells in a previous publication. In this paper, the fabrication and properties of indium tin oxide/p-Si single-crystal solar cells will be described. The ITO is deposited by the ion-beam sputtering method. Best photovoltaic devices are obtained when the composition of indium tin oxide (ITO) is 91 mole% and 9 mole% SnO/sub 2/. The device properties as a function of the ITO composition will be described. The thickness and the composition of the oxide-silicon interface is critical for device performance. The existence of a thin interfacial layer is demonstrated by Auger spectroscopy. The effect of temperature on device performance and the spectral response are compared with the theory. The SIS model accurately matches the major trends observed in experimental nITO/p-Si solar cells.

• Research Organization: Division of Engineering, Brown University, Providence, Rhode Island 02912
• OSTI ID: 6128567
• Journal Information: J. Appl. Phys.; (United States), Vol. 50:4
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
SOLAR CELLS
FABRICATION
CHEMICAL COMPOSITION
DEPOSITION
INDIUM OXIDES
MONOCRYSTALS
PERFORMANCE
SILICON
SPUTTERING
TEMPERATURE DEPENDENCE
TIN OXIDES
CHALCOGENIDES
CRYSTALS
DIRECT ENERGY CONVERTERS
ELEMENTS
INDIUM COMPOUNDS
OXIDES
OXYGEN COMPOUNDS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SEMIMETALS
TIN COMPOUNDS
140501* - Solar Energy Conversion- Photovoltaic Conversion