skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Symmetric arsenic dimers on the Si(100) surface

Abstract

Deposition of arsenic on Si(100) results in a well-ordered, highly passivated, and stable surface. From a comparison between angle-resolved photoemission data and ab initio pseudopotential calculations we conclude that the observed 2 x 1 reconstruction is caused by the formation of symmetric As-As dimers on the surface. The calculated surface band dispersion for this model is in excellent agreement with experiment.

Authors:
; ; ;
Publication Date:
Research Org.:
Xerox Palo Alto Research Center, Palo Alto, California 94304
OSTI Identifier:
6127779
Resource Type:
Journal Article
Journal Name:
Phys. Rev. Lett.; (United States)
Additional Journal Information:
Journal Volume: 56:5
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ARSENIC; BINDING ENERGY; ELECTRONIC STRUCTURE; DIMERS; BRILLOUIN ZONES; DEPOSITION; PHOTOEMISSION; POTENTIALS; SILICON; SYMMETRY; ELEMENTS; EMISSION; ENERGY; SECONDARY EMISSION; SEMIMETALS; ZONES; 360603* - Materials- Properties; 360602 - Other Materials- Structure & Phase Studies

Citation Formats

Uhrberg, R I.G., Bringans, R D, Bachrach, R Z, and Northrup, J E. Symmetric arsenic dimers on the Si(100) surface. United States: N. p., 1986. Web. doi:10.1103/PhysRevLett.56.520.
Uhrberg, R I.G., Bringans, R D, Bachrach, R Z, & Northrup, J E. Symmetric arsenic dimers on the Si(100) surface. United States. doi:10.1103/PhysRevLett.56.520.
Uhrberg, R I.G., Bringans, R D, Bachrach, R Z, and Northrup, J E. Mon . "Symmetric arsenic dimers on the Si(100) surface". United States. doi:10.1103/PhysRevLett.56.520.
@article{osti_6127779,
title = {Symmetric arsenic dimers on the Si(100) surface},
author = {Uhrberg, R I.G. and Bringans, R D and Bachrach, R Z and Northrup, J E},
abstractNote = {Deposition of arsenic on Si(100) results in a well-ordered, highly passivated, and stable surface. From a comparison between angle-resolved photoemission data and ab initio pseudopotential calculations we conclude that the observed 2 x 1 reconstruction is caused by the formation of symmetric As-As dimers on the surface. The calculated surface band dispersion for this model is in excellent agreement with experiment.},
doi = {10.1103/PhysRevLett.56.520},
journal = {Phys. Rev. Lett.; (United States)},
number = ,
volume = 56:5,
place = {United States},
year = {1986},
month = {2}
}