Dielectric properties of thin film SrTiO{sub 3} grown on LaAlO{sub 3} with YBa{sub 2}Cu{sub 3}O{sub 7{minus}x} electrodes
Conference
·
OSTI ID:61242
- Univ. of Colorado, Boulder, CO (United States). Dept. of Electrical Engineering
- Univ. of Colorado, Boulder, CO (United States). Dept. of Physics
- National Institute of Standards and Technology, Boulder, CO (United States). Electromagnetic Technology Division
The authors have fabricated and characterized YBCO (YBa{sub 2}Cu{sub 3}O{sub 7{minus}x}) microstrip resonators on LAO (LaAlO{sub 3}) substrates that include thin film STO (SrTiO{sub 3}) coplanar capacitors to study the dielectric properties of thin film STO. The low frequency capacitance of the STO/LAO capacitor is measured as a function of temperature and dc bias. They use the observed resonant frequencies to extract the microwave frequency capacitance of the structure and the Q`s to determine the microwave losses. A conformal map is developed and used to transform the observed capacitances into dielectric constant values for the thin film STO.
- OSTI ID:
- 61242
- Report Number(s):
- CONF-940142-; ISBN 0-8194-1451-4; TRN: IM9526%%23
- Resource Relation:
- Conference: OE/LASE `94: conference on optics, electro-optics, and laser applications in science and engineering, Los Angeles, CA (United States), 22-29 Jan 1994; Other Information: PBD: 1994; Related Information: Is Part Of High {Tc} microwave superconductors and applications. Volume 2156; Hammond, R.B.; Withers, R.S. [eds.]; PB: 235 p.
- Country of Publication:
- United States
- Language:
- English
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