Gallium phosphide high-temperature bipolar junction transistor
Abstract
Transistor action at temperatures from 20 to 450 /sup 0/C has been demonstrated for p/sup +/n/sup -/pp/sup +/ bipolar structures fabricated in GaP. Improvements in the materials technology were essential to successful fabrication of these devices. The structural configuration chosen could also be used as a junction field-effect transistor although this mode of operation was limited by the initial design to lower operating temperatures. While present device characteristics are restricted by ohmic contact resistance, this does not appear to be a fundamental limitation. These results demonstrate that GaP is a good materials candidate in which to base a technology for active electronic components operated at high temperatures.
- Authors:
- Publication Date:
- Research Org.:
- Sandia National Laboratories Albuquerque, New Mexico 87185
- OSTI Identifier:
- 6120447
- Resource Type:
- Journal Article
- Journal Name:
- Appl. Phys. Lett.; (United States)
- Additional Journal Information:
- Journal Volume: 39:11
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING; JUNCTION TRANSISTORS; CONFIGURATION; FABRICATION; ELECTRIC CONDUCTIVITY; ELECTRIC CONTACTS; FIELD EFFECT TRANSISTORS; GALLIUM PHOSPHIDES; HIGH TEMPERATURE; MATHEMATICAL MODELS; MEDIUM TEMPERATURE; ELECTRICAL EQUIPMENT; ELECTRICAL PROPERTIES; EQUIPMENT; GALLIUM COMPOUNDS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PHYSICAL PROPERTIES; PNICTIDES; SEMICONDUCTOR DEVICES; TRANSISTORS; 420800* - Engineering- Electronic Circuits & Devices- (-1989)
Citation Formats
Zipperian, T E, and Dawson, L R. Gallium phosphide high-temperature bipolar junction transistor. United States: N. p., 1981.
Web. doi:10.1063/1.92598.
Zipperian, T E, & Dawson, L R. Gallium phosphide high-temperature bipolar junction transistor. United States. https://doi.org/10.1063/1.92598
Zipperian, T E, and Dawson, L R. 1981.
"Gallium phosphide high-temperature bipolar junction transistor". United States. https://doi.org/10.1063/1.92598.
@article{osti_6120447,
title = {Gallium phosphide high-temperature bipolar junction transistor},
author = {Zipperian, T E and Dawson, L R},
abstractNote = {Transistor action at temperatures from 20 to 450 /sup 0/C has been demonstrated for p/sup +/n/sup -/pp/sup +/ bipolar structures fabricated in GaP. Improvements in the materials technology were essential to successful fabrication of these devices. The structural configuration chosen could also be used as a junction field-effect transistor although this mode of operation was limited by the initial design to lower operating temperatures. While present device characteristics are restricted by ohmic contact resistance, this does not appear to be a fundamental limitation. These results demonstrate that GaP is a good materials candidate in which to base a technology for active electronic components operated at high temperatures.},
doi = {10.1063/1.92598},
url = {https://www.osti.gov/biblio/6120447},
journal = {Appl. Phys. Lett.; (United States)},
number = ,
volume = 39:11,
place = {United States},
year = {Tue Dec 01 00:00:00 EST 1981},
month = {Tue Dec 01 00:00:00 EST 1981}
}
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