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Title: Electron spin resonance study of interface states induced by electron injection in metal-oxide-semiconductor devices

Abstract

We find that electrons emitted from silicon into the oxide of metal-oxide-silicon devices generate amphoteric trivalent silicon (P/sub b/ center) defects at the Si/SiO/sub 2/ interface. The P/sub b/ centers are generated in numbers approximately equal to that of the electron injection induced interface states. The effects of electron injection are similar to those of ionizing radiation to the extent that in both cases P/sub b/ centers are generated at the Si/SiO/sub 2/ interface. However, the effects are not identical; ionizing radiation creates another trivalent silicon defect, termed E', in the oxide. We are unable to observe any E' generation in oxides subjected to electron injection. There appears to be a strong correlation between the number of trapped electrons and the electron injection induced P/sub b/ center interface states; this observation suggests that the trapping of electrons in the bulk of the oxides is in some way related to the creation of the P/sub b/ center interface state defects. We find that dry oxides subjected to a deuterium/nitrogen anneal exhibit less electron trapping than otherwise identical oxides which have been subjected to a hydrogen/nitrogen anneal. This observation is consistent with the idea that a hydrogen bond breaking event may bemore » involved in electron capture.« less

Authors:
;
Publication Date:
Research Org.:
Sandia National Laboratories, Albuquerque, New Mexico 87185
OSTI Identifier:
6117822
DOE Contract Number:  
AC04-76DP00789
Resource Type:
Journal Article
Journal Name:
J. Appl. Phys.; (United States)
Additional Journal Information:
Journal Volume: 59:6
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 42 ENGINEERING; SEMICONDUCTOR JUNCTIONS; CRYSTAL DEFECTS; ELECTRON SPIN RESONANCE; ELECTRONIC STRUCTURE; SILICON; ELECTRON EMISSION; ANNEALING; DAMAGE; DEUTERIUM; ELECTRON BEAM INJECTION; ELECTRON COLLISIONS; FERMI LEVEL; GAMMA RADIATION; HOLES; HYDROGEN; INTERFACES; MOSFET; SILICA; TRAPPING; BEAM INJECTION; CHALCOGENIDES; COLLISIONS; CRYSTAL STRUCTURE; ELECTROMAGNETIC RADIATION; ELEMENTS; EMISSION; ENERGY LEVELS; FIELD EFFECT TRANSISTORS; HEAT TREATMENTS; HYDROGEN ISOTOPES; IONIZING RADIATIONS; ISOTOPES; JUNCTIONS; LIGHT NUCLEI; MAGNETIC RESONANCE; MINERALS; MOS TRANSISTORS; NONMETALS; NUCLEI; ODD-ODD NUCLEI; OXIDE MINERALS; OXIDES; OXYGEN COMPOUNDS; RADIATIONS; RESONANCE; SEMICONDUCTOR DEVICES; SEMIMETALS; SILICON COMPOUNDS; SILICON OXIDES; STABLE ISOTOPES; TRANSISTORS; 360603* - Materials- Properties; 420800 - Engineering- Electronic Circuits & Devices- (-1989)

Citation Formats

Mikawa, R E, and Lenahan, P M. Electron spin resonance study of interface states induced by electron injection in metal-oxide-semiconductor devices. United States: N. p., 1986. Web. doi:10.1063/1.336390.
Mikawa, R E, & Lenahan, P M. Electron spin resonance study of interface states induced by electron injection in metal-oxide-semiconductor devices. United States. https://doi.org/10.1063/1.336390
Mikawa, R E, and Lenahan, P M. 1986. "Electron spin resonance study of interface states induced by electron injection in metal-oxide-semiconductor devices". United States. https://doi.org/10.1063/1.336390.
@article{osti_6117822,
title = {Electron spin resonance study of interface states induced by electron injection in metal-oxide-semiconductor devices},
author = {Mikawa, R E and Lenahan, P M},
abstractNote = {We find that electrons emitted from silicon into the oxide of metal-oxide-silicon devices generate amphoteric trivalent silicon (P/sub b/ center) defects at the Si/SiO/sub 2/ interface. The P/sub b/ centers are generated in numbers approximately equal to that of the electron injection induced interface states. The effects of electron injection are similar to those of ionizing radiation to the extent that in both cases P/sub b/ centers are generated at the Si/SiO/sub 2/ interface. However, the effects are not identical; ionizing radiation creates another trivalent silicon defect, termed E', in the oxide. We are unable to observe any E' generation in oxides subjected to electron injection. There appears to be a strong correlation between the number of trapped electrons and the electron injection induced P/sub b/ center interface states; this observation suggests that the trapping of electrons in the bulk of the oxides is in some way related to the creation of the P/sub b/ center interface state defects. We find that dry oxides subjected to a deuterium/nitrogen anneal exhibit less electron trapping than otherwise identical oxides which have been subjected to a hydrogen/nitrogen anneal. This observation is consistent with the idea that a hydrogen bond breaking event may be involved in electron capture.},
doi = {10.1063/1.336390},
url = {https://www.osti.gov/biblio/6117822}, journal = {J. Appl. Phys.; (United States)},
number = ,
volume = 59:6,
place = {United States},
year = {Sat Mar 15 00:00:00 EST 1986},
month = {Sat Mar 15 00:00:00 EST 1986}
}