Schottky barrier height variation due to a Mo interfacial layer in W/GaAs systems
The effect of the interfacial Mo-GaAs alloy layer on the Schottky barrier characteristics of W/GaAs contacts is investigated. Variation in Schottky barrier heights is measured by fabricating W(300 nm thick)/Mo(0--10 nm)/GaAs diodes, where a Ga/sub 2/ O/sub 3/ layer 0.9 nm thick is previously formed on the GaAs surface. The oxide layer is intended to detect the initial stage of the interfacial reaction which could remove the oxide layer and influence electrical characteristics. The maximum barrier height and the minimum ideality factor are obtained at a Mo layer thickness of 1 nm after annealing at 450 /sup 0/C. The Mo layer reduces the Ga/sub 2/ O/sub 3/ layer on GaAs surfaces and forms the compounds GaMo/sub 3/ and Mo/sub 5/ As/sub 4/ with the GaAs substrates by a solid-phase reaction. The intimate contact of these compounds to the substrates is thought to be formed some distance below the original Mo/GaAs interface. The formation and control of buried Schottky barrier contacts using refractory metals are experimentally verified. This allows more reliable gate barriers for GaAs metal-semiconductor field-effect transistors.
- Research Organization:
- NTT LSI Laboratories, 3-1, Morinosato Wakamiya, Atsugi-shi, Kanagawa Prefecture 243-01, Japan
- OSTI ID:
- 6116430
- Journal Information:
- J. Appl. Phys.; (United States), Vol. 65:11
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
GALLIUM ARSENIDES
ELECTRICAL PROPERTIES
MOLYBDENUM
TUNGSTEN
DOPED MATERIALS
FIELD EFFECT TRANSISTORS
INTERFACES
MHZ RANGE
N-TYPE CONDUCTORS
PHOTOELECTRON SPECTROSCOPY
SCHOTTKY BARRIER DIODES
SILICON
X RADIATION
X-RAY DIFFRACTION
ARSENIC COMPOUNDS
ARSENIDES
COHERENT SCATTERING
DIFFRACTION
ELECTROMAGNETIC RADIATION
ELECTRON SPECTROSCOPY
ELEMENTS
FREQUENCY RANGE
GALLIUM COMPOUNDS
IONIZING RADIATIONS
MATERIALS
METALS
PHYSICAL PROPERTIES
PNICTIDES
RADIATIONS
SCATTERING
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR MATERIALS
SEMIMETALS
SPECTROSCOPY
TRANSISTORS
TRANSITION ELEMENTS
360104* - Metals & Alloys- Physical Properties