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Title: Raman scattering spectrum along a bevel etched GaAs on Si, TEM (transmission electron microscope) study and GaAs p-i-n photodetector on Si

Abstract

Raman scattering is measured along a bevel-etched GaAs epitaxial film grown on Si by molecular beam epitaxial (MBE). From the correlation length profile of Raman scattering, most dislocation lines are confined in the 2000 A regions close to the interface. The strain profile calculated from the Raman peak shift shows that about 0.6% compressive strain exists near the interface because of lattice mismatch. However, as one moves away from the interface, the compressive strain is gradually counterbalanced by thermal expansion. Transmission electron microscope (TEM) studies of the local dislocation image and properties show that an ultra clean Si surface is essential for dislocation confinement. From high resolution TEM, we find that the distance between dislocations at the interface is nonuniform, varying from 50 A to 125 A with an average distance at 81 A. Finally, a GaAs p-i-n photodetector on Si substrate is fabricated. Even though a normal photoresponse curve is obtained, the high dark current (50/sub n/ A) and relatively low responsivity (0.01A/W) show that the material quality needs to be further improved to make a minority carrier vertical transition device. 10 refs., 8 figs.

Authors:
; ; ; ; ; ; ; ;
Publication Date:
Research Org.:
Lawrence Berkeley Lab., CA (USA); California Univ., Berkeley (USA)
OSTI Identifier:
6092974
Report Number(s):
LBL-23742; CONF-870438-37
ON: DE88000210
DOE Contract Number:  
AC03-76SF00098
Resource Type:
Conference
Resource Relation:
Conference: Spring meeting of the Materials Research Society, Anaheim, CA, USA, 21 Apr 1987; Other Information: Portions of this document are illegible in microfiche products
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; GALLIUM ARSENIDES; MOLECULAR BEAM EPITAXY; RAMAN SPECTRA; PHOTODETECTORS; FABRICATION; SILICON; SURFACE COATING; CRYSTAL LATTICES; CRYSTALS; DISLOCATIONS; PHOTODIODES; STACKING FAULTS; STRAINS; TRANSMISSION ELECTRON MICROSCOPY; ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DEPOSITION; ELECTRON MICROSCOPY; ELEMENTS; EPITAXY; GALLIUM COMPOUNDS; LINE DEFECTS; MICROSCOPY; PNICTIDES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SEMIMETALS; SPECTRA; 360603* - Materials- Properties; 360102 - Metals & Alloys- Structure & Phase Studies

Citation Formats

Lo, Y H, Charasse, M N, Lee, H, Vakhshoori, D, Huang, Y, Yu, P, Liliental-Weber, Z, Werner, M, and Wang, S. Raman scattering spectrum along a bevel etched GaAs on Si, TEM (transmission electron microscope) study and GaAs p-i-n photodetector on Si. United States: N. p., 1987. Web.
Lo, Y H, Charasse, M N, Lee, H, Vakhshoori, D, Huang, Y, Yu, P, Liliental-Weber, Z, Werner, M, & Wang, S. Raman scattering spectrum along a bevel etched GaAs on Si, TEM (transmission electron microscope) study and GaAs p-i-n photodetector on Si. United States.
Lo, Y H, Charasse, M N, Lee, H, Vakhshoori, D, Huang, Y, Yu, P, Liliental-Weber, Z, Werner, M, and Wang, S. Fri . "Raman scattering spectrum along a bevel etched GaAs on Si, TEM (transmission electron microscope) study and GaAs p-i-n photodetector on Si". United States.
@article{osti_6092974,
title = {Raman scattering spectrum along a bevel etched GaAs on Si, TEM (transmission electron microscope) study and GaAs p-i-n photodetector on Si},
author = {Lo, Y H and Charasse, M N and Lee, H and Vakhshoori, D and Huang, Y and Yu, P and Liliental-Weber, Z and Werner, M and Wang, S},
abstractNote = {Raman scattering is measured along a bevel-etched GaAs epitaxial film grown on Si by molecular beam epitaxial (MBE). From the correlation length profile of Raman scattering, most dislocation lines are confined in the 2000 A regions close to the interface. The strain profile calculated from the Raman peak shift shows that about 0.6% compressive strain exists near the interface because of lattice mismatch. However, as one moves away from the interface, the compressive strain is gradually counterbalanced by thermal expansion. Transmission electron microscope (TEM) studies of the local dislocation image and properties show that an ultra clean Si surface is essential for dislocation confinement. From high resolution TEM, we find that the distance between dislocations at the interface is nonuniform, varying from 50 A to 125 A with an average distance at 81 A. Finally, a GaAs p-i-n photodetector on Si substrate is fabricated. Even though a normal photoresponse curve is obtained, the high dark current (50/sub n/ A) and relatively low responsivity (0.01A/W) show that the material quality needs to be further improved to make a minority carrier vertical transition device. 10 refs., 8 figs.},
doi = {},
url = {https://www.osti.gov/biblio/6092974}, journal = {},
number = ,
volume = ,
place = {United States},
year = {1987},
month = {5}
}

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