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Title: Crystallization of ultrathin W-Si multilayer structures by high-energy heavy ion irradiations

Abstract

Ultrathin amorphous multilayers structures (1.55 nm bilayer period) were irradiated by high-energy heavy ion ({sup 127}I and {sup 238}U ions). Transmission electron microscopy study shows that the ion-material interaction in such a configuration leads to an irreversible transformation of the initial amorphous structures. In this letter, we report the first observation of the crystallization of the multilayers induced by the heavy ion irradiations with a subsequent formation of a new WSi structure. The crucial role of the electronic effects in the crystallization process is discussed relatively to the other phenomena induced under the ion irradiation.

Authors:
;  [1];  [2];  [3]; ;  [4]
  1. (URA CNRS 783, Faculte des Sciences de Luminy, Departement de Physique, Case 901-13 288 Marseille Cedex 9 (France))
  2. (URA CNRS 843, Faculte des Sciences de St. Jerome, Case 141-13397 Marseille Cedex 13 (France))
  3. (CIRIL, Rue Claude Bloch, BP 5133-14040 Caen Cedex (France))
  4. (CRN Groupe Phase-67037 Strasbourg Cedex (France))
Publication Date:
OSTI Identifier:
6085767
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; (USA); Journal Volume: 57:17
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; SILICON; PHYSICAL RADIATION EFFECTS; TUNGSTEN; AMORPHOUS STATE; CRYSTALLIZATION; IODINE 127; IODINE IONS; LAYERS; PHASE TRANSFORMATIONS; SILICON ALLOYS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; TUNGSTEN ALLOYS; TUNGSTEN SILICIDES; URANIUM 238; URANIUM IONS; ACTINIDE ISOTOPES; ACTINIDE NUCLEI; ALLOYS; ALPHA DECAY RADIOISOTOPES; CHARGED PARTICLES; ELECTRON MICROSCOPY; ELEMENTS; EVEN-EVEN NUCLEI; FILMS; HEAVY NUCLEI; INTERMEDIATE MASS NUCLEI; IODINE ISOTOPES; IONS; ISOTOPES; METALS; MICROSCOPY; NUCLEI; ODD-EVEN NUCLEI; RADIATION EFFECTS; RADIOISOTOPES; REFRACTORY METAL COMPOUNDS; SEMIMETALS; SILICIDES; SILICON COMPOUNDS; STABLE ISOTOPES; TRANSITION ELEMENT COMPOUNDS; TRANSITION ELEMENTS; TUNGSTEN COMPOUNDS; URANIUM ISOTOPES; YEARS LIVING RADIOISOTOPES; 360106* - Metals & Alloys- Radiation Effects

Citation Formats

Marfaing, J., Marine, W., Vidal, B., Toulemonde, M., Hage Ali, M., and Stoquert, J.P. Crystallization of ultrathin W-Si multilayer structures by high-energy heavy ion irradiations. United States: N. p., 1990. Web. doi:10.1063/1.104052.
Marfaing, J., Marine, W., Vidal, B., Toulemonde, M., Hage Ali, M., & Stoquert, J.P. Crystallization of ultrathin W-Si multilayer structures by high-energy heavy ion irradiations. United States. doi:10.1063/1.104052.
Marfaing, J., Marine, W., Vidal, B., Toulemonde, M., Hage Ali, M., and Stoquert, J.P. Mon . "Crystallization of ultrathin W-Si multilayer structures by high-energy heavy ion irradiations". United States. doi:10.1063/1.104052.
@article{osti_6085767,
title = {Crystallization of ultrathin W-Si multilayer structures by high-energy heavy ion irradiations},
author = {Marfaing, J. and Marine, W. and Vidal, B. and Toulemonde, M. and Hage Ali, M. and Stoquert, J.P.},
abstractNote = {Ultrathin amorphous multilayers structures (1.55 nm bilayer period) were irradiated by high-energy heavy ion ({sup 127}I and {sup 238}U ions). Transmission electron microscopy study shows that the ion-material interaction in such a configuration leads to an irreversible transformation of the initial amorphous structures. In this letter, we report the first observation of the crystallization of the multilayers induced by the heavy ion irradiations with a subsequent formation of a new WSi structure. The crucial role of the electronic effects in the crystallization process is discussed relatively to the other phenomena induced under the ion irradiation.},
doi = {10.1063/1.104052},
journal = {Applied Physics Letters; (USA)},
number = ,
volume = 57:17,
place = {United States},
year = {Mon Oct 22 00:00:00 EDT 1990},
month = {Mon Oct 22 00:00:00 EDT 1990}
}