Effect of fluorine ions on the growth and properties of anodic oxide layers of indium arsenide
The practical use of multielement IR photodetectors and idium arsenide memory elements, developed in recent years, largely determines the possibilities of the technology of deposition of dielectric layers on the surface of a semiconductor. In this paper the authors present the results of a study of the effect of fluorine ions introduced into the electrolyte on the rate of the anodic process and on the electrophysical properties of the AOF/indium arsenide interface. It is concluded that: the introduction of ammonium fluoride into a nonaqueous solution of sulfosalicylic acid increases the electrical conductivity of the electrolyte and the rate of oxidation of the semiconductor, decreases the absolute value of the potential of flat bands and the density of surface states at the oxide/indium-arsenide interface, and has no effect on the stability of the electrophysical parameters of MIS structures.
- Research Organization:
- Moscow Institute of Electrical Engineering
- OSTI ID:
- 6084205
- Journal Information:
- Inorg. Mater. (Engl. Transl.); (United States), Vol. 21:4; Other Information: Translated from Izvestiya Akademii Nauk SSSR, Neorganicheskie Materialy, Vol. 21, No. 4, pp. 537-540, April, 1985
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
42 ENGINEERING
FLUORINE COMPOUNDS
CRYSTAL GROWTH
ELECTRICAL PROPERTIES
INDIUM ARSENIDES
MIS TRANSISTORS
FABRICATION
AMMONIUM FLUORIDES
ANODES
DEPOSITION
ELECTROLYTES
INTERFACES
MEMORY DEVICES
OXIDES
PHOTODETECTORS
SEMICONDUCTOR MATERIALS
SURFACE PROPERTIES
AMMONIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CHALCOGENIDES
ELECTRODES
FLUORIDES
HALIDES
HALOGEN COMPOUNDS
INDIUM COMPOUNDS
MATERIALS
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
SEMICONDUCTOR DEVICES
TRANSISTORS
360603* - Materials- Properties
360602 - Other Materials- Structure & Phase Studies
420800 - Engineering- Electronic Circuits & Devices- (-1989)