Mask-less fabrication of A-Si solar cell using laser scribe process

Conference · Tue May 01 00:00:00 EDT 1984 · Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States)

OSTI ID:6075717

Yamazaki, S; Itoh, K; Mase, A; Shibata, K; Shinohara, H; Urata, K; Watabe, S

The new practical integration process of amorphous silicon (a-Si) solar cells using laser scribing lithography is presented. A 12-stage series-connected, integrated solar cell having a structure of glass-TCO/PIN/metal electrode was fabricated by two laser scribing steps and one metal masking step, or three laser scribing steps alone. The former cell has 6.4% conversion efficiency under AM1 (100mW/cm/sup 2/) and 7.15% under 500Lx fluorescent lamp (69% effective area on 10cm x 10cm substrate), and the latter has 4.11% conversion efficiency under AM1 (83% effective area on 10cm x 10cm substrate). The scribe process is carried out with YAG laser scriber using Q-switched 1.06 micron wavelength light.

• Research Organization: Semiconductor Energy Laboratory Inc., Tokyo
• OSTI ID: 6075717
• Report Number(s): CONF-840561-
• Journal Information: Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States), Conference: 17. IEEE photovoltaic specialists conference, Orlando, FL, USA, 1 May 1984
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
SILICON SOLAR CELLS
FABRICATION
AMORPHOUS STATE
EFFICIENCY
ELECTRODES
GLASS
LASER RADIATION
LIGHT BULBS
Q-SWITCHING
SILICON
SURFACE PROPERTIES
DIRECT ENERGY CONVERTERS
ELECTROMAGNETIC RADIATION
ELEMENTS
EQUIPMENT
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
RADIATIONS
SEMIMETALS
SOLAR CELLS
SOLAR EQUIPMENT
140501* - Solar Energy Conversion- Photovoltaic Conversion