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Title: Sunlight engineering efficiency of thin-layer iron-thiazine photogalvanic cells. Evidence that surface-induced back reaction is a key limiting factor

Journal Article · · Adv. Chem. Ser.; (United States)
OSTI ID:6074270

Absorption spectra and redox potentials in acid solution limit sunlight engineering efficiency (S.E.E.) of unsensitized iron-thiazine photogalvanic cells to approx. 2%. The highest S.E.E. value obtained with totally illuminated single thin-layer (TI-TL) iron-thionine cells with SnO/sub 2/ anodes and Pt cathodes, .036%, corresponds to V/sub power point/ approx. 35% of theoretical limit. Potentials at the selective anode are dominated by the dye-leucodyne couple. Potentials at the poorly selective cathode are dominated by the iron couple. I/sub sc/ varies linearly with photostationary concentration of leucothionine and with electrode spacing less than or equal to 50 ..mu..m, is not limited by solution lifetime of charge carriers. Inefficient electron transfer at the electrodes is believed to reduce S.E.E. by a factor of approx. 5, possibly because of surface-promoted back reaction on SnO/sub 2/. 18 references.

DOE Contract Number:
EY-76-S-02-2889
OSTI ID:
6074270
Journal Information:
Adv. Chem. Ser.; (United States), Vol. 173
Country of Publication:
United States
Language:
English