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Title: Electron irradiated solar cells: cold crucible (Ga), float zone (Ga,B) and Czochralski (Ga,B)

Abstract

Silicon materials grown by cold crucible, float zone or Czochralski methods, containing gallium or boron dopants, have undergone bulk and electrical analyses and have been fabricated into solar cells. Solar cell characteristics have been measured as a function of 1 MeV electron fluence to 10/sup 16/ e/cm/sup 2/. Comparisons of radiation effects on cell characteristics are made between the material groups in the study and with published results of other workers. Although some differences in performance with radiation exposure between the various groups were observed, only in the case of 0.1 ..cap omega..-cm gallium-doped multipass float zone and boron-doped multipass float zone were the differences found to be significant.

Authors:
;
Publication Date:
Research Org.:
Spectrolab, Inc., 12500 Gladstone Avenue, Sylmar, California
OSTI Identifier:
6070642
Report Number(s):
CONF-840561-
Journal ID: CODEN: CRCND
Resource Type:
Conference
Journal Name:
Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States)
Additional Journal Information:
Conference: 17. IEEE photovoltaic specialists conference, Orlando, FL, USA, 1 May 1984
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; SILICON SOLAR CELLS; DOPED MATERIALS; FABRICATION; RADIATION EFFECTS; BORON; COMPARATIVE EVALUATIONS; CZOCHRALSKI METHOD; ELECTRICAL PROPERTIES; ELECTRON BEAMS; FUNCTIONAL ANALYSIS; GALLIUM; IRRADIATION; MEASURING METHODS; PERFORMANCE TESTING; RADIATION DOSES; TECHNOLOGY TRANSFER; ZONE MELTING; BEAMS; CRYSTAL GROWTH METHODS; DIRECT ENERGY CONVERTERS; DOSES; ELEMENTS; EQUIPMENT; LEPTON BEAMS; MATERIALS; MATHEMATICS; MELTING; METALS; PARTICLE BEAMS; PHASE TRANSFORMATIONS; PHOTOELECTRIC CELLS; PHOTOVOLTAIC CELLS; PHYSICAL PROPERTIES; SEMIMETALS; SOLAR CELLS; SOLAR EQUIPMENT; TESTING; 140501* - Solar Energy Conversion- Photovoltaic Conversion

Citation Formats

Minahan, J A, and Trumble, T M. Electron irradiated solar cells: cold crucible (Ga), float zone (Ga,B) and Czochralski (Ga,B). United States: N. p., 1984. Web.
Minahan, J A, & Trumble, T M. Electron irradiated solar cells: cold crucible (Ga), float zone (Ga,B) and Czochralski (Ga,B). United States.
Minahan, J A, and Trumble, T M. 1984. "Electron irradiated solar cells: cold crucible (Ga), float zone (Ga,B) and Czochralski (Ga,B)". United States.
@article{osti_6070642,
title = {Electron irradiated solar cells: cold crucible (Ga), float zone (Ga,B) and Czochralski (Ga,B)},
author = {Minahan, J A and Trumble, T M},
abstractNote = {Silicon materials grown by cold crucible, float zone or Czochralski methods, containing gallium or boron dopants, have undergone bulk and electrical analyses and have been fabricated into solar cells. Solar cell characteristics have been measured as a function of 1 MeV electron fluence to 10/sup 16/ e/cm/sup 2/. Comparisons of radiation effects on cell characteristics are made between the material groups in the study and with published results of other workers. Although some differences in performance with radiation exposure between the various groups were observed, only in the case of 0.1 ..cap omega..-cm gallium-doped multipass float zone and boron-doped multipass float zone were the differences found to be significant.},
doi = {},
url = {https://www.osti.gov/biblio/6070642}, journal = {Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States)},
number = ,
volume = ,
place = {United States},
year = {Tue May 01 00:00:00 EDT 1984},
month = {Tue May 01 00:00:00 EDT 1984}
}

Conference:
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