Poly-Si etching using an electron cyclotron resonance microwave plasma sources with multipole confinement
- Oak Ridge National Lab., TN (United States)
- SEMATECH, Austin, TX (United States)
In this study, mirror field and single coil 2.45 GHz electron cyclotron resonance (ECR) microwave plasma sources were coupled to a multipole, multicusp plasma confinement system, and used to produce chlorine plasmas for poly-Si etching. Scanning Langmuir probes were used to study the effect of process parameters on plasma potentials, plasma density, plasma density uniformity, and electron temperature, while poly-Si etching experiments on 150-mm diam wafers were used to relate process parameters and Langmuir probe results to etch rate, SiO{sub 2} selectivity, photo-resist selectivity, and etch uniformity. RF substrate bias at 13.56 MHz was used for ion energy control, and the addition of a third coil below the substrate plane was found useful for fine-tuning the radial plasma uniformity. Undoped poly-Si etch rates >3000 {Angstrom}/min, Si/SiO{sub 2} etch selectivities >25, and 150-mm diam etch uniformities >2% at 1 sigma were obtained but not simultaneously. Tradeoffs in choosing operating conditions for optimum poly-Si etch performance will be discussed.
- Research Organization:
- Oak Ridge National Lab., TN (United States)
- Sponsoring Organization:
- USDOE; USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC05-84OR21400
- OSTI ID:
- 6070629
- Report Number(s):
- CONF-911132-11; ON: DE92005114
- Resource Relation:
- Conference: 38. national symposium of the American Vacuum Society, Seattle, WA (United States), 11-15 Nov 1991
- Country of Publication:
- United States
- Language:
- English
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