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Title: TEM investigation of polar-on-nonpolar epitaxy: GaAs-AlGaAs on (100) Ge

Abstract

Morphologically excellent GaAs and AlGaAs epitaxial layers have been grown on (100) Ge substrates by molecular-beam epitaxy (MBE). Transmission electron-microscopy (TEM) studies of the thin-film cross sections revealed that defects, most probably antiphase domains, were contained within a 20 to 30 nm thick initial layer near the GaAs/Ge interface, formed with a 0.1-..mu..m/h growth rate at 500/sup 0/C. A reduction of defects occurred in the remaining 0.1-..mu..m thick layer, for which the growth rate and temperature had been increased to 1 ..mu..m/h and 580/sup 0/C, respectively. The interface between this GaAs layer and a subsequently grown 35-nm thick AlAs film was found to undulate with a period of 150 to 200 nm and an amplitude of 5 to 10 nm. Such large undulations were not observed in AlGaAs-GaAs superlattices grown after an additional deposition of 2-..mu..m GaAs. High-resolutin electron-microscopy observations suggest that transitions between different layers are abrupt on the atomic scale. In addition, modulation-doped field-effect transistors fabricated on these layers had similar characteristics to those obtained with MBE layers grown on GaAs substrates. These results demonstrate that the (100) Ge surface is suitable for MBE polar-on-nonpolar semiconductor growth and that the integration of III-V films with silicon electronic devicesmore » via epitaxial Ge on Si is feasible, provided that epitaxial Ge of sufficient quality grown on Si is available.« less

Authors:
; ; ; ; ; ;
Publication Date:
Research Org.:
Lawrence Berkeley Lab., CA (USA); Illinois Univ., Urbana (USA)
OSTI Identifier:
6058359
Report Number(s):
LBL-18921; CONF-841157-83
ON: DE85007613
DOE Contract Number:  
AC03-76SF00098
Resource Type:
Conference
Resource Relation:
Conference: Materials Research Society annual meeting, Boston, MA, USA, 26 Nov 1984
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; 47 OTHER INSTRUMENTATION; 36 MATERIALS SCIENCE; ALUMINIUM ARSENIDES; MOLECULAR BEAM EPITAXY; TRANSMISSION ELECTRON MICROSCOPY; GALLIUM ARSENIDES; CRYSTAL DEFECTS; GERMANIUM; ALUMINIUM COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL STRUCTURE; ELECTRON MICROSCOPY; ELEMENTS; EPITAXY; GALLIUM COMPOUNDS; METALS; MICROSCOPY; PNICTIDES; 420800* - Engineering- Electronic Circuits & Devices- (-1989); 440300 - Miscellaneous Instruments- (-1989); 360601 - Other Materials- Preparation & Manufacture

Citation Formats

Mazur, J H, Washburn, J, Henderson, T, Klem, J, Masselink, W T, Fischer, R, and Morkoc, H. TEM investigation of polar-on-nonpolar epitaxy: GaAs-AlGaAs on (100) Ge. United States: N. p., 1984. Web.
Mazur, J H, Washburn, J, Henderson, T, Klem, J, Masselink, W T, Fischer, R, & Morkoc, H. TEM investigation of polar-on-nonpolar epitaxy: GaAs-AlGaAs on (100) Ge. United States.
Mazur, J H, Washburn, J, Henderson, T, Klem, J, Masselink, W T, Fischer, R, and Morkoc, H. Thu . "TEM investigation of polar-on-nonpolar epitaxy: GaAs-AlGaAs on (100) Ge". United States.
@article{osti_6058359,
title = {TEM investigation of polar-on-nonpolar epitaxy: GaAs-AlGaAs on (100) Ge},
author = {Mazur, J H and Washburn, J and Henderson, T and Klem, J and Masselink, W T and Fischer, R and Morkoc, H},
abstractNote = {Morphologically excellent GaAs and AlGaAs epitaxial layers have been grown on (100) Ge substrates by molecular-beam epitaxy (MBE). Transmission electron-microscopy (TEM) studies of the thin-film cross sections revealed that defects, most probably antiphase domains, were contained within a 20 to 30 nm thick initial layer near the GaAs/Ge interface, formed with a 0.1-..mu..m/h growth rate at 500/sup 0/C. A reduction of defects occurred in the remaining 0.1-..mu..m thick layer, for which the growth rate and temperature had been increased to 1 ..mu..m/h and 580/sup 0/C, respectively. The interface between this GaAs layer and a subsequently grown 35-nm thick AlAs film was found to undulate with a period of 150 to 200 nm and an amplitude of 5 to 10 nm. Such large undulations were not observed in AlGaAs-GaAs superlattices grown after an additional deposition of 2-..mu..m GaAs. High-resolutin electron-microscopy observations suggest that transitions between different layers are abrupt on the atomic scale. In addition, modulation-doped field-effect transistors fabricated on these layers had similar characteristics to those obtained with MBE layers grown on GaAs substrates. These results demonstrate that the (100) Ge surface is suitable for MBE polar-on-nonpolar semiconductor growth and that the integration of III-V films with silicon electronic devices via epitaxial Ge on Si is feasible, provided that epitaxial Ge of sufficient quality grown on Si is available.},
doi = {},
url = {https://www.osti.gov/biblio/6058359}, journal = {},
number = ,
volume = ,
place = {United States},
year = {1984},
month = {11}
}

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