Leakage and reliability characteristics of lead zirconate titanate thin-film capacitors
- Sandia National Labs., Albuquerque, NM (United States)
Resistance degradation in lead zirconate titanate (Pb-(Zr,Ti)O{sub 3}, PZT) thin-film capacitors has been studied as a function of applied voltage, temperature, and film composition. The mean time-to-failure (lifetime, or t{sub f}) of the capacitors shows a power-law dependence on voltage of the form t{sub f} inversely proportional to V{sup {minus}n} (n {approx} 4--5). The capacitor lifetime also exhibits a temperature dependence of the form t{sub f} inversely proportional to exp[E{sub a}/(kT)], with an activation energy of 0.6--1.0 eV. The stead-state leakage current in these samples seems to be bulk controlled. The voltage V, temperature T, and polarity dependence of the leakage current collectively suggest a leakage-current mechanism that is most similar to a Frenkel-Poole process. The t{sub f} value and the leakage current of niobium-doped PZT films are superior to those of undoped PZT films. This result can be explained on the basis of the point-defect chemistry of the PZT system. Finally, the results indicate that the niobium-doped PZT films meet essential t{sub f} requirements for decoupling-capacitor applications.
- Research Organization:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 605758
- Journal Information:
- Journal of the American Ceramic Society, Vol. 80, Issue 12; Other Information: PBD: Dec 1997
- Country of Publication:
- United States
- Language:
- English
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