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Title: Vertical gradient freeze GaAs: Growth and electrical properties

Abstract

We have investigated the influence of silicon contamination prevention methods on the electrical properties of GaAs grown by the Vertical Gradient Freeze (VGF) technique. We report the effectiveness of these methods for GaAs crystals grown from two different starting materials: n-type with resistivities in the range of 10/sup /minus/1/ to 10/sup 3/ ..cap omega..-cm and semi-insulating (SI) with a resistivity of 10/sup 8/ ..cap omega..-cm. We have found that the impurities in the starting materials, specifically boron, carbon and silicon, have an effect on the ability to control silicon contamination with methods that have been reported previously in the literature. We also report the attainment of SI crystals using a PBN crucible, a SI charge and B/sub 2/O/sub 3/ encapsulation. 61 refs., 13 figs., 7 tabs.

Authors:
Publication Date:
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
OSTI Identifier:
6055130
Report Number(s):
LBL-27271
ON: DE89014894
DOE Contract Number:  
AC03-76SF00098
Resource Type:
Technical Report
Resource Relation:
Other Information: Thesis (M.S.). Portions of this document are illegible in microfiche products
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; GALLIUM ARSENIDES; ELECTRICAL PROPERTIES; BORON OXIDES; CARBON; CRYSTAL GROWTH; ELECTRIC CONDUCTIVITY; ENCAPSULATION; SEMICONDUCTOR MATERIALS; SILICON; SYNTHESIS; ARSENIC COMPOUNDS; ARSENIDES; BORON COMPOUNDS; CHALCOGENIDES; ELEMENTS; GALLIUM COMPOUNDS; MATERIALS; NONMETALS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; PNICTIDES; SEMIMETALS; 360104* - Metals & Alloys- Physical Properties

Citation Formats

Galiano, M. L. Vertical gradient freeze GaAs: Growth and electrical properties. United States: N. p., 1989. Web. doi:10.2172/6055130.
Galiano, M. L. Vertical gradient freeze GaAs: Growth and electrical properties. United States. https://doi.org/10.2172/6055130
Galiano, M. L. Mon . "Vertical gradient freeze GaAs: Growth and electrical properties". United States. https://doi.org/10.2172/6055130. https://www.osti.gov/servlets/purl/6055130.
@article{osti_6055130,
title = {Vertical gradient freeze GaAs: Growth and electrical properties},
author = {Galiano, M. L.},
abstractNote = {We have investigated the influence of silicon contamination prevention methods on the electrical properties of GaAs grown by the Vertical Gradient Freeze (VGF) technique. We report the effectiveness of these methods for GaAs crystals grown from two different starting materials: n-type with resistivities in the range of 10/sup /minus/1/ to 10/sup 3/ ..cap omega..-cm and semi-insulating (SI) with a resistivity of 10/sup 8/ ..cap omega..-cm. We have found that the impurities in the starting materials, specifically boron, carbon and silicon, have an effect on the ability to control silicon contamination with methods that have been reported previously in the literature. We also report the attainment of SI crystals using a PBN crucible, a SI charge and B/sub 2/O/sub 3/ encapsulation. 61 refs., 13 figs., 7 tabs.},
doi = {10.2172/6055130},
url = {https://www.osti.gov/biblio/6055130}, journal = {},
number = ,
volume = ,
place = {United States},
year = {1989},
month = {5}
}