Josephson LSI fabrication technology using NbN/MgO/NbN tunnel junctions

Conference · Fri Mar 01 00:00:00 EST 1991 · IEEE Transactions on Magnetics (Institute of Electrical and Electronics Engineers); (United States)

OSTI ID:6047532

Aoyagi, M; Nakagawa, H; Kurosawa, I; Takada, S ^[1]

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1. Electrotechnical Lab., I-1-4 Umezono, Tsukuba-shi, Ibaraki-ken 305 (JP)

The authors have developed Josphson LSI fabrication technology using NbN/MgO/NbN tunnel junctions. This paper reports on deposition process of the NbN electrode investigated to obtain high uniformity of the electrical properties. The deposition process of the MgO tunnel barrier was investigated to obtain high reproducibility of the Josephson critical current density. The NbN film with high Tc of 15 K was obtained. The reproducibility of the MgO deposition rate was improved. The 10-bit instruction 128-word ROM unit chip was successfully fabricated using the NbN/MgO/NbN junction LSI technology with the 3 {mu}m design rule. The READ operation test was performed for a few 10-bit words. The total access time was measured to be 710 ps. The uniformity and the reproducibility of the critical current density in the LSI chip were improved. The application of the NbN/MgO/NbN tunnel junction to the Josephson LSI fabrication technology was demonstrated.

• OSTI ID: 6047532
• Report Number(s): CONF-900944-; CODEN: IEMGA
• Journal Information: IEEE Transactions on Magnetics (Institute of Electrical and Electronics Engineers); (United States), Vol. 27:2; Conference: 1990 applied superconductivity conference, Snowmass, CO (United States), 24-28 Sep 1990; ISSN 0018-9464
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
JOSEPHSON JUNCTIONS
FABRICATION
MAGNESIUM OXIDES
DIFFUSION BARRIERS
NIOBIUM NITRIDES
ELECTRICAL PROPERTIES
CHEMICAL COMPOSITION
CRITICAL CURRENT
CURRENT DENSITY
DESIGN
LAYERS
SUPERCONDUCTIVITY
TECHNOLOGY ASSESSMENT
TUNNEL EFFECT
ALKALINE EARTH METAL COMPOUNDS
CHALCOGENIDES
CURRENTS
ELECTRIC CONDUCTIVITY
ELECTRIC CURRENTS
JUNCTIONS
MAGNESIUM COMPOUNDS
NIOBIUM COMPOUNDS
NITRIDES
NITROGEN COMPOUNDS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
REFRACTORY METAL COMPOUNDS
SUPERCONDUCTING JUNCTIONS
TRANSITION ELEMENT COMPOUNDS
665412* - Superconducting Devices- (1992-)