Single mode laser with a V-shaped active layer grown by metalorganic chemical vapor deposition: A v-shaped double heterostructure laser

Journal Article · Tue Sep 01 00:00:00 EDT 1981 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.329522· OSTI ID:6039848

Mori, Y; Matsuda, O; Watanabe, N

A single-mode Al/sub x/Ga/sub 1-x/As/GaAs laser of excellent performance was made by metalorganic chemical vapor deposition. The laser has a double heterostructure with a small V-shaped active region of a self-aligned junction stripe geometrically grown on a groove-etched substrate. The self-aligning process was based on a newly found anomalous zinc diffusion phenomenon. The minimum threshold current and the maximum differential quantum efficiency in continuous operation were 15 mA and 65% for a 250-..mu..m-long device. The output power up to 40 mW was attained with an Si/sub 3/N/sub 4/ coated device. The beam shape from the laser was nearly circular with an aspect ratio less than 1.5.

• Research Organization: Sony Corporation Research Center, 174 Fujitsuka-cho, Hodogaya-ku, Yokohama, 240 Japan
• OSTI ID: 6039848
• Journal Information: J. Appl. Phys.; (United States), Vol. 52:9
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
SEMICONDUCTOR LASERS
OSCILLATION MODES
ALIGNMENT
ALUMINIUM ARSENIDES
BEAM OPTICS
CHEMICAL VAPOR DEPOSITION
CIRCULAR CONFIGURATION
CRYSTAL GROWTH
DIFFUSION
ETCHING
EXPERIMENTAL DATA
GALLIUM ARSENIDES
GEOMETRY
LAYERS
QUANTUM EFFICIENCY
SEMICONDUCTOR JUNCTIONS
SILICON NITRIDES
SUBSTRATES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
CONFIGURATION
DATA
DEPOSITION
EFFICIENCY
GALLIUM COMPOUNDS
INFORMATION
JUNCTIONS
LASERS
MATHEMATICS
NITRIDES
NITROGEN COMPOUNDS
NUMERICAL DATA
PNICTIDES
SEMICONDUCTOR DEVICES
SILICON COMPOUNDS
SURFACE COATING
SURFACE FINISHING
420300* - Engineering- Lasers- (-1989)