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Title: Cavity design for improved electrical injection in InAlGaP/AlGaAs visible (639--661 nm) vertical-cavity surface-emitting laser diodes

Abstract

A novel optical cavity design for improved electrical injection in visible vertical-cavity surface-emitting laser (VCSEL) diodes employing an InGaP/InAlGaP strained quantum-well active optical cavity and AlAs/Al[sub 0.5]Ga[sub 0.5]As distributed Bragg reflectors (DBRs) is described. The cavity design was determined by measuring the lasing threshold current density of visible edge-emitting laser diodes with AlAs/Al[sub 0.5]Ga[sub 0.5]As DBR cladding layers. By inserting InAlP spacer layers between the active region and the DBR cladding, significant improvement in the performance of the edge-emitting lasers was achieved. This approach was then applied to the design of visible VCSEL diodes, and resulted in the first demonstration of room-temperature electrically injected lasing, over the wavelength range 639--661 nm. The visible VCSELs, with a diameter of 20 [mu]m, exhibit pulsed output power of 3.4 mW at 650 nm, and continue to lase at a duty cycle of 40%. The threshold current was 30 mA, with a low threshold voltage (2.7 V) and low series resistance ([lt]15 [Omega]).

Authors:
;  [1]
  1. Sandia National Laboratories, Albuquerque, New Mexico 87185-5800 (United States)
Publication Date:
OSTI Identifier:
6038290
DOE Contract Number:  
AC04-76DP00789
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters; (United States)
Additional Journal Information:
Journal Volume: 63:7; Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; SEMICONDUCTOR LASERS; LASER CAVITIES; ALUMINIUM ARSENIDES; EFFICIENCY; GALLIUM ARSENIDES; GALLIUM PHOSPHIDES; HETEROJUNCTIONS; INDIUM PHOSPHIDES; THRESHOLD CURRENT; VISIBLE SPECTRA; ALUMINIUM COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; CURRENTS; ELECTRIC CURRENTS; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; JUNCTIONS; LASERS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PNICTIDES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR JUNCTIONS; SOLID STATE LASERS; SPECTRA; 426002* - Engineering- Lasers & Masers- (1990-)

Citation Formats

Schneider, Jr, R P, and Lott, J A. Cavity design for improved electrical injection in InAlGaP/AlGaAs visible (639--661 nm) vertical-cavity surface-emitting laser diodes. United States: N. p., 1993. Web. doi:10.1063/1.109844.
Schneider, Jr, R P, & Lott, J A. Cavity design for improved electrical injection in InAlGaP/AlGaAs visible (639--661 nm) vertical-cavity surface-emitting laser diodes. United States. doi:10.1063/1.109844.
Schneider, Jr, R P, and Lott, J A. Mon . "Cavity design for improved electrical injection in InAlGaP/AlGaAs visible (639--661 nm) vertical-cavity surface-emitting laser diodes". United States. doi:10.1063/1.109844.
@article{osti_6038290,
title = {Cavity design for improved electrical injection in InAlGaP/AlGaAs visible (639--661 nm) vertical-cavity surface-emitting laser diodes},
author = {Schneider, Jr, R P and Lott, J A},
abstractNote = {A novel optical cavity design for improved electrical injection in visible vertical-cavity surface-emitting laser (VCSEL) diodes employing an InGaP/InAlGaP strained quantum-well active optical cavity and AlAs/Al[sub 0.5]Ga[sub 0.5]As distributed Bragg reflectors (DBRs) is described. The cavity design was determined by measuring the lasing threshold current density of visible edge-emitting laser diodes with AlAs/Al[sub 0.5]Ga[sub 0.5]As DBR cladding layers. By inserting InAlP spacer layers between the active region and the DBR cladding, significant improvement in the performance of the edge-emitting lasers was achieved. This approach was then applied to the design of visible VCSEL diodes, and resulted in the first demonstration of room-temperature electrically injected lasing, over the wavelength range 639--661 nm. The visible VCSELs, with a diameter of 20 [mu]m, exhibit pulsed output power of 3.4 mW at 650 nm, and continue to lase at a duty cycle of 40%. The threshold current was 30 mA, with a low threshold voltage (2.7 V) and low series resistance ([lt]15 [Omega]).},
doi = {10.1063/1.109844},
journal = {Applied Physics Letters; (United States)},
issn = {0003-6951},
number = ,
volume = 63:7,
place = {United States},
year = {1993},
month = {8}
}