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Title: Deep-etch x-ray lithography at the ALS: First results

Technical Report ·
DOI:https://doi.org/10.2172/603689· OSTI ID:603689
;  [1];  [2]
  1. Ernest Orlando Lawrence Berkeley National Lab., CA (United States)
  2. Jet Propulsion Lab., Pasadena, CA (United States); and others

The fabrication of high-aspect-ratio and three-dimensional (3D) microstructures is of increasing interest in a multitude of applications in fields such as micromechanics, optics, and interconnect technology. Techniques and processes that enable lithography in thick materials differ from the planar technologies used in standard integrated circuit processing. Deep x-ray lithography permits extremely precise and deep proximity printing of a given pattern from a mask into a very thick resist. It requires a source of hard, intense, and well collimated x-ray radiation, as is provided by a synchrotron radiation source. The thick resist microstructures, so produced can be used as templates from which ultrahigh precision parts with high aspect ratios can be mass-produced out of a large variety of materials (metals, plastics, ceramics). This whole series of techniques and processes has been historically referred to as {open_quotes}LIGA,{close_quotes} from the German acronym for lithography, electroforming (Galvanoformung), and plastic molding (Abformung), the first development of the basic LIGA process having been performed at the Nuclear Research Center at Karlsruhe in Germany.

Research Organization:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
DOE Contract Number:
AC03-76SF00098
OSTI ID:
603689
Report Number(s):
LBNL-39981; ON: DE97007345; TRN: 98:009617
Resource Relation:
Other Information: PBD: Apr 1997; Related Information: Is Part Of Advanced light source: Compendium of user abstracts 1993--1996; PB: 622 p.
Country of Publication:
United States
Language:
English