Determination of the localization of oxygen in the germanium lattice after large implantation doses
Journal Article
·
· Sov. Phys. - Semicond. (Engl. Transl.); (United States)
OSTI ID:6036771
Germanium samples were doped by implantation of 150 keV oxygen ions in doses of 10/sup 16/--10/sup 17/ cm/sup -2/. The positions of the oxygen ions were determined by subsequent bombardment with 21.4 MeV alpha particles and measurement of their energy spectra and orientational dependences. The results indicated that 80--90% of the implanted oxygen atoms occupied the regular lattice sites. Moreover, an increase in the dose to 10/sup 17/ cm/sup -2/ resulted in considerable damage to the germanium lattice. (AIP)
- Research Organization:
- Scientific-Research Institute of Nuclear Physics at the S.M. Kirov Polytechnic Institute, Tomsk
- OSTI ID:
- 6036771
- Journal Information:
- Sov. Phys. - Semicond. (Engl. Transl.); (United States), Vol. 13:2
- Country of Publication:
- United States
- Language:
- English
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