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Title: Determination of the localization of oxygen in the germanium lattice after large implantation doses

Abstract

Germanium samples were doped by implantation of 150 keV oxygen ions in doses of 10/sup 16/--10/sup 17/ cm/sup -2/. The positions of the oxygen ions were determined by subsequent bombardment with 21.4 MeV alpha particles and measurement of their energy spectra and orientational dependences. The results indicated that 80--90% of the implanted oxygen atoms occupied the regular lattice sites. Moreover, an increase in the dose to 10/sup 17/ cm/sup -2/ resulted in considerable damage to the germanium lattice. (AIP)

Authors:
; ;
Publication Date:
Research Org.:
Scientific-Research Institute of Nuclear Physics at the S.M. Kirov Polytechnic Institute, Tomsk
OSTI Identifier:
6036771
Alternate Identifier(s):
OSTI ID: 6036771
Resource Type:
Journal Article
Journal Name:
Sov. Phys. - Semicond. (Engl. Transl.); (United States)
Additional Journal Information:
Journal Volume: 13:2
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; GERMANIUM; CRYSTAL DOPING; ALPHA PARTICLES; ION IMPLANTATION; OXYGEN IONS; SCATTERING; SPATIAL DISTRIBUTION; CHARGED PARTICLES; DISTRIBUTION; ELEMENTS; IONS; METALS 360605* -- Materials-- Radiation Effects

Citation Formats

Kryuchkov, Y.Y., Timoshnikov, Y.A., and Chernov, I.P. Determination of the localization of oxygen in the germanium lattice after large implantation doses. United States: N. p., 1979. Web.
Kryuchkov, Y.Y., Timoshnikov, Y.A., & Chernov, I.P. Determination of the localization of oxygen in the germanium lattice after large implantation doses. United States.
Kryuchkov, Y.Y., Timoshnikov, Y.A., and Chernov, I.P. Thu . "Determination of the localization of oxygen in the germanium lattice after large implantation doses". United States.
@article{osti_6036771,
title = {Determination of the localization of oxygen in the germanium lattice after large implantation doses},
author = {Kryuchkov, Y.Y. and Timoshnikov, Y.A. and Chernov, I.P.},
abstractNote = {Germanium samples were doped by implantation of 150 keV oxygen ions in doses of 10/sup 16/--10/sup 17/ cm/sup -2/. The positions of the oxygen ions were determined by subsequent bombardment with 21.4 MeV alpha particles and measurement of their energy spectra and orientational dependences. The results indicated that 80--90% of the implanted oxygen atoms occupied the regular lattice sites. Moreover, an increase in the dose to 10/sup 17/ cm/sup -2/ resulted in considerable damage to the germanium lattice. (AIP)},
doi = {},
journal = {Sov. Phys. - Semicond. (Engl. Transl.); (United States)},
number = ,
volume = 13:2,
place = {United States},
year = {1979},
month = {2}
}