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Title: X-ray absorption and reflection as probes of the GaN conduction bands: Theory and experiments

Abstract

X-ray absorption measurements are a well-known probe of the unoccupied states in a material. The same information can be obtained by using glancing angle X-ray reflectivity. In spite of several existing band structure calculations of the group III nitrides and previous optical studies in UV range, a direct probe of their conduction band densities of states is of interest. The authors performed a joint experimental and theoretical investigation using both of these experimental techniques for wurtzite GaN.

Authors:
; ;  [1]
  1. Case Western Reserve Univ., Cleveland, OH (United States) [and others
Publication Date:
Research Org.:
Lawrence Berkeley Lab., CA (United States)
OSTI Identifier:
603490
Report Number(s):
LBNL-39981
ON: DE97007345; TRN: 98:009515
DOE Contract Number:  
AC03-76SF00098
Resource Type:
Technical Report
Resource Relation:
Other Information: PBD: Apr 1997; Related Information: Is Part Of Advanced light source: Compendium of user abstracts 1993--1996; PB: 622 p.
Country of Publication:
United States
Language:
English
Subject:
66 PHYSICS; 36 MATERIALS SCIENCE; GALLIUM NITRIDES; BAND THEORY; DIELECTRIC PROPERTIES; SOFT X RADIATION; ABSORPTION SPECTRA; OPTICAL REFLECTION

Citation Formats

Lambrecht, W.R.L., Rashkeev, S.N., and Segall, B. X-ray absorption and reflection as probes of the GaN conduction bands: Theory and experiments. United States: N. p., 1997. Web. doi:10.2172/603490.
Lambrecht, W.R.L., Rashkeev, S.N., & Segall, B. X-ray absorption and reflection as probes of the GaN conduction bands: Theory and experiments. United States. doi:10.2172/603490.
Lambrecht, W.R.L., Rashkeev, S.N., and Segall, B. Tue . "X-ray absorption and reflection as probes of the GaN conduction bands: Theory and experiments". United States. doi:10.2172/603490. https://www.osti.gov/servlets/purl/603490.
@article{osti_603490,
title = {X-ray absorption and reflection as probes of the GaN conduction bands: Theory and experiments},
author = {Lambrecht, W.R.L. and Rashkeev, S.N. and Segall, B.},
abstractNote = {X-ray absorption measurements are a well-known probe of the unoccupied states in a material. The same information can be obtained by using glancing angle X-ray reflectivity. In spite of several existing band structure calculations of the group III nitrides and previous optical studies in UV range, a direct probe of their conduction band densities of states is of interest. The authors performed a joint experimental and theoretical investigation using both of these experimental techniques for wurtzite GaN.},
doi = {10.2172/603490},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Apr 01 00:00:00 EST 1997},
month = {Tue Apr 01 00:00:00 EST 1997}
}

Technical Report:

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