I-V characteristics of microwave-driven Josephson junctions in the low-frequency and high-damping regime

Journal Article · Mon Apr 01 00:00:00 EST 1985 · Phys. Rev. B: Condens. Matter; (United States)

DOI:https://doi.org/10.1103/PhysRevB.31.4230· OSTI ID:6032625

Vanneste, C; Chi, C C; Brown, K H; Callegari, A C; Chen, M M; Greiner, J H; Jones, H C; Kim, K K; Kleinsasser, A W; Notarys, H A; Proto, G; Wang, R H; Yogi, T

Experimental I-V curves of microwave-driven Josephson tunnel junctions with resistive shunts are reported. The results are in very good agreement with numerical calculations using the resistively shunted junction model. In the low-frequency regime there are three distinct regions in the I-V curves and two different types of Shapiro steps. It is demonstrated that the overall shape of the I-V curves can be explained by using an adiabatic interpretation of the junction response. The two different types of Shapiro steps are related to a compensation effect between dc and rf bias currents.

• Research Organization: IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598
• OSTI ID: 6032625
• Journal Information: Phys. Rev. B: Condens. Matter; (United States), Vol. 31:7
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
JOSEPHSON JUNCTIONS
ELECTRIC CONDUCTIVITY
BESSEL FUNCTIONS
MICROWAVE RADIATION
NONLINEAR PROBLEMS
RESPONSE FUNCTIONS
TUNNEL EFFECT
ELECTRICAL PROPERTIES
ELECTROMAGNETIC RADIATION
FUNCTIONS
JUNCTIONS
PHYSICAL PROPERTIES
RADIATIONS
SUPERCONDUCTING JUNCTIONS
420201* - Engineering- Cryogenic Equipment & Devices