Effects of macroscopic inhomogeneities on electron mobility in semi-insulating GaAs

Journal Article · Thu May 01 00:00:00 EDT 1986 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.336893· OSTI ID:6021578

Walukiewicz, W; Wang, L; Pawlowicz, L M; Lagowski, J; Gatos, H C

We show that defect inhomogeneities of sizes larger than the electron mean free path are responsible for the low values and anomalous temperature dependence of the electron mobility in semi-insulating (SI) GaAs. The room-temperature electron mobility values below about 6000 cm/sup 2//V s cannot be uniquely used for the determination of the concentration of ionized defects, since the contribution from inhomogeneities usually exceeds that from scattering by ionized impurities. The effects of the macroscopically inhomogeneous distribution of residual acceptors and the major deep donor EL2 diminish at elevated temperatures between 600 and 900 K, which offers a means for identification of inhomogeneities, and furthermore explains recently reported steplike mobility versus temperature behavior in SI-GaAs.

• Research Organization: Center for Advanced Materials, Lawrence Berkeley Laboratory, University of California, Berkeley, California 94720
• DOE Contract Number: AC03-76SF00098
• OSTI ID: 6021578
• Journal Information: J. Appl. Phys.; (United States), Vol. 59:9
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GALLIUM ARSENIDES
CHARGED-PARTICLE TRANSPORT
CRYSTAL DEFECTS
ELECTRON MOBILITY
IMPURITIES
ELECTRIC CONDUCTIVITY
HALL EFFECT
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL STRUCTURE
ELECTRICAL PROPERTIES
GALLIUM COMPOUNDS
MOBILITY
PARTICLE MOBILITY
PHYSICAL PROPERTIES
PNICTIDES
RADIATION TRANSPORT
360603* - Materials- Properties