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Title: Effects of macroscopic inhomogeneities on electron mobility in semi-insulating GaAs

Abstract

We show that defect inhomogeneities of sizes larger than the electron mean free path are responsible for the low values and anomalous temperature dependence of the electron mobility in semi-insulating (SI) GaAs. The room-temperature electron mobility values below about 6000 cm/sup 2//V s cannot be uniquely used for the determination of the concentration of ionized defects, since the contribution from inhomogeneities usually exceeds that from scattering by ionized impurities. The effects of the macroscopically inhomogeneous distribution of residual acceptors and the major deep donor EL2 diminish at elevated temperatures between 600 and 900 K, which offers a means for identification of inhomogeneities, and furthermore explains recently reported steplike mobility versus temperature behavior in SI-GaAs.

Authors:
; ; ; ;
Publication Date:
Research Org.:
Center for Advanced Materials, Lawrence Berkeley Laboratory, University of California, Berkeley, California 94720
OSTI Identifier:
6021578
DOE Contract Number:  
AC03-76SF00098
Resource Type:
Journal Article
Journal Name:
J. Appl. Phys.; (United States)
Additional Journal Information:
Journal Volume: 59:9
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; GALLIUM ARSENIDES; CHARGED-PARTICLE TRANSPORT; CRYSTAL DEFECTS; ELECTRON MOBILITY; IMPURITIES; ELECTRIC CONDUCTIVITY; HALL EFFECT; ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL STRUCTURE; ELECTRICAL PROPERTIES; GALLIUM COMPOUNDS; MOBILITY; PARTICLE MOBILITY; PHYSICAL PROPERTIES; PNICTIDES; RADIATION TRANSPORT; 360603* - Materials- Properties

Citation Formats

Walukiewicz, W, Wang, L, Pawlowicz, L M, Lagowski, J, and Gatos, H C. Effects of macroscopic inhomogeneities on electron mobility in semi-insulating GaAs. United States: N. p., 1986. Web. doi:10.1063/1.336893.
Walukiewicz, W, Wang, L, Pawlowicz, L M, Lagowski, J, & Gatos, H C. Effects of macroscopic inhomogeneities on electron mobility in semi-insulating GaAs. United States. https://doi.org/10.1063/1.336893
Walukiewicz, W, Wang, L, Pawlowicz, L M, Lagowski, J, and Gatos, H C. Thu . "Effects of macroscopic inhomogeneities on electron mobility in semi-insulating GaAs". United States. https://doi.org/10.1063/1.336893.
@article{osti_6021578,
title = {Effects of macroscopic inhomogeneities on electron mobility in semi-insulating GaAs},
author = {Walukiewicz, W and Wang, L and Pawlowicz, L M and Lagowski, J and Gatos, H C},
abstractNote = {We show that defect inhomogeneities of sizes larger than the electron mean free path are responsible for the low values and anomalous temperature dependence of the electron mobility in semi-insulating (SI) GaAs. The room-temperature electron mobility values below about 6000 cm/sup 2//V s cannot be uniquely used for the determination of the concentration of ionized defects, since the contribution from inhomogeneities usually exceeds that from scattering by ionized impurities. The effects of the macroscopically inhomogeneous distribution of residual acceptors and the major deep donor EL2 diminish at elevated temperatures between 600 and 900 K, which offers a means for identification of inhomogeneities, and furthermore explains recently reported steplike mobility versus temperature behavior in SI-GaAs.},
doi = {10.1063/1.336893},
url = {https://www.osti.gov/biblio/6021578}, journal = {J. Appl. Phys.; (United States)},
number = ,
volume = 59:9,
place = {United States},
year = {1986},
month = {5}
}