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Title: Effect of hydrogen content on the properties of reactively sputtered amorphous Si-H

Abstract

Hydrogenated a-Si films containing exclusively monohydride bonding have been produced over a range of hydrogen densities between 0 and 20 at. % by reactive sputtering. Deposition, conductivity, activation energy, and optical gap data are presented for these films. These data indicate that 5 at. % of hydrogen bonds to sites which would otherwise be dangling or spin paired bonds while additional hydrogen replaced Si-Si bonds. It is proposed that hydrogen added above 5 at. % reduces the recombination rate by relaxing the a-Si network.

Authors:
; ;
Publication Date:
Research Org.:
Ames Lab., IA (USA)
OSTI Identifier:
6017443
Report Number(s):
ISM-237; CONF-790851-4
TRN: 79-021490
DOE Contract Number:  
W-7405-ENG-82
Resource Type:
Conference
Resource Relation:
Conference: 8. international conference on amorphous and liquid semiconductors, Cambridge, MA, USA, 27 Aug 1979
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; SILANES; ACTIVATION ENERGY; PHOTOCONDUCTIVITY; AMORPHOUS STATE; BONDING; DENSITY; FILMS; HYDROGEN; PRESSURE DEPENDENCE; SILICON; SPUTTERING; CRYOGENIC FLUIDS; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; ELEMENTS; ENERGY; FABRICATION; FLUIDS; HYDRIDES; HYDROGEN COMPOUNDS; JOINING; NONMETALS; PHYSICAL PROPERTIES; SEMIMETALS; SILICON COMPOUNDS; 360204* - Ceramics, Cermets, & Refractories- Physical Properties

Citation Formats

Jeffrey, F R, Shanks, H R, and Danielson, G C. Effect of hydrogen content on the properties of reactively sputtered amorphous Si-H. United States: N. p., 1979. Web.
Jeffrey, F R, Shanks, H R, & Danielson, G C. Effect of hydrogen content on the properties of reactively sputtered amorphous Si-H. United States.
Jeffrey, F R, Shanks, H R, and Danielson, G C. 1979. "Effect of hydrogen content on the properties of reactively sputtered amorphous Si-H". United States.
@article{osti_6017443,
title = {Effect of hydrogen content on the properties of reactively sputtered amorphous Si-H},
author = {Jeffrey, F R and Shanks, H R and Danielson, G C},
abstractNote = {Hydrogenated a-Si films containing exclusively monohydride bonding have been produced over a range of hydrogen densities between 0 and 20 at. % by reactive sputtering. Deposition, conductivity, activation energy, and optical gap data are presented for these films. These data indicate that 5 at. % of hydrogen bonds to sites which would otherwise be dangling or spin paired bonds while additional hydrogen replaced Si-Si bonds. It is proposed that hydrogen added above 5 at. % reduces the recombination rate by relaxing the a-Si network.},
doi = {},
url = {https://www.osti.gov/biblio/6017443}, journal = {},
number = ,
volume = ,
place = {United States},
year = {Mon Jan 01 00:00:00 EST 1979},
month = {Mon Jan 01 00:00:00 EST 1979}
}

Conference:
Other availability
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