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Title: Amorphous Ge bipolar blocking contacts on Ge detectors

Abstract

Semiconductor nuclear radiation detectors are usually operated in a full depletion mode and blocking contacts are required to maintain low leakage currents and high electric fields for charge collection. Blocking contacts on Ge detectors typically consist of n-type contacts formed by lithium diffusion and p-type contacts formed by boron ion implantation. Electrical contacts formed using sputtered amorphous Ge (a-Ge) films on high-purity Ge crystals were found to exhibit good blocking behavior in both polarities with low leakage currents. The a-Ge contacts have thin dead layers associated with them and can be used in place of lithium-diffused, ion-implanted or Schottky barrier contacts on Ge radiation detectors. Multi-electrode detectors can be fabricated with very simple processing steps using these contacts. 12 refs.

Authors:
; ; ; ;
Publication Date:
Research Org.:
Lawrence Berkeley Lab., CA (United States)
Sponsoring Org.:
USDOE; USDOE, Washington, DC (United States)
OSTI Identifier:
6015921
Report Number(s):
LBL-30606; CONF-911106-45
ON: DE92004094
DOE Contract Number:  
AC03-76SF00098
Resource Type:
Conference
Resource Relation:
Conference: IEEE nuclear science symposium, Santa Fe, NM (United States), 5-9 Nov 1991
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; GE SEMICONDUCTOR DETECTORS; ELECTRIC CONTACTS; AMORPHOUS STATE; COBALT 60; ELECTRICAL TESTING; SPUTTERING; BETA DECAY RADIOISOTOPES; BETA-MINUS DECAY RADIOISOTOPES; COBALT ISOTOPES; ELECTRICAL EQUIPMENT; EQUIPMENT; INTERMEDIATE MASS NUCLEI; INTERNAL CONVERSION RADIOISOTOPES; ISOMERIC TRANSITION ISOTOPES; ISOTOPES; MATERIALS TESTING; MEASURING INSTRUMENTS; MINUTES LIVING RADIOISOTOPES; NONDESTRUCTIVE TESTING; NUCLEI; ODD-ODD NUCLEI; RADIATION DETECTORS; RADIOISOTOPES; SEMICONDUCTOR DETECTORS; TESTING; YEARS LIVING RADIOISOT; 440103* - Radiation Instrumentation- Nuclear Spectroscopic Instrumentation

Citation Formats

Luke, P N, Cork, C P, Madden, N W, Rossington, C S, and Wesela, M F. Amorphous Ge bipolar blocking contacts on Ge detectors. United States: N. p., 1991. Web.
Luke, P N, Cork, C P, Madden, N W, Rossington, C S, & Wesela, M F. Amorphous Ge bipolar blocking contacts on Ge detectors. United States.
Luke, P N, Cork, C P, Madden, N W, Rossington, C S, and Wesela, M F. Tue . "Amorphous Ge bipolar blocking contacts on Ge detectors". United States. https://www.osti.gov/servlets/purl/6015921.
@article{osti_6015921,
title = {Amorphous Ge bipolar blocking contacts on Ge detectors},
author = {Luke, P N and Cork, C P and Madden, N W and Rossington, C S and Wesela, M F},
abstractNote = {Semiconductor nuclear radiation detectors are usually operated in a full depletion mode and blocking contacts are required to maintain low leakage currents and high electric fields for charge collection. Blocking contacts on Ge detectors typically consist of n-type contacts formed by lithium diffusion and p-type contacts formed by boron ion implantation. Electrical contacts formed using sputtered amorphous Ge (a-Ge) films on high-purity Ge crystals were found to exhibit good blocking behavior in both polarities with low leakage currents. The a-Ge contacts have thin dead layers associated with them and can be used in place of lithium-diffused, ion-implanted or Schottky barrier contacts on Ge radiation detectors. Multi-electrode detectors can be fabricated with very simple processing steps using these contacts. 12 refs.},
doi = {},
url = {https://www.osti.gov/biblio/6015921}, journal = {},
number = ,
volume = ,
place = {United States},
year = {1991},
month = {10}
}

Conference:
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