Photovoltaic effect in Cd/sub 2/ SnO/sub 4/-CdGeP/sub 2/ heterojunctions

Journal Article · Sun Jan 01 00:00:00 EST 1989 · Sov. Phys. J. (Engl. Transl.); (United States)

OSTI ID:6011534

Lunev, A V; Rud, Yu V; Tairov, M A; Undalov, Yu K

It is shown experimentally to be possible to form rectifying photosensitive heterojunctions by using the method of reactive cathodic sputtering to deposit layers of Cd/sub 2/SnO/sub 4/ on the surface of n- and p-type CdGeP/sub 2/ single crystals. It is demonstrated that photosensitivity is seen in the range between widths of the forbidden bands of CdGeP/sub 2/ and Cd/sub 2/SnO/sub 4/; photosensitivity is 3-4 orders of magnitude greater for n-n junctions than for n-p junctions. The parameters of polarizational photosensitivity were established and analyzed, providing evidence that the investigated system, with an n-n contact, can be used to make polarimetric photodetectors.

• Research Organization: A.F. Ioffe Physicotechnical Institute (USSR)
• OSTI ID: 6011534
• Journal Information: Sov. Phys. J. (Engl. Transl.); (United States), Vol. 31:7; Other Information: Translated from Izvestiya Vysshikh Uchebynkh Zavedenij Fizika; 31: No. 7, 77-82 (Jul 1988)
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
HETEROJUNCTIONS
PHOTOVOLTAIC EFFECT
CADMIUM OXIDES
CADMIUM PHOSPHIDES
COMPARATIVE EVALUATIONS
COPPER
CRYSTAL DOPING
DOPED MATERIALS
GALLIUM
GERMANIUM PHOSPHIDES
INDIUM
MATERIALS TESTING
N-TYPE CONDUCTORS
P-N JUNCTIONS
P-TYPE CONDUCTORS
PHOTOCONDUCTIVITY
PHOTODETECTORS
PHOTOSENSITIVITY
TIN OXIDES
CADMIUM COMPOUNDS
CHALCOGENIDES
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELEMENTS
GERMANIUM COMPOUNDS
JUNCTIONS
MATERIALS
METALS
OXIDES
OXYGEN COMPOUNDS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHOTOELECTROMAGNETIC EFFECTS
PHYSICAL PROPERTIES
PNICTIDES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR MATERIALS
SENSITIVITY
TESTING
TIN COMPOUNDS
TRANSITION ELEMENTS
360204* - Ceramics
Cermets
& Refractories- Physical Properties
360603 - Materials- Properties